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Infineon IPD068N10N3GATMA1 N-Channel MOSFET 100 V 90 A Surface Mount TO-252 5-Pin 150W Power Semiconductor IPD068N10N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD068N10N3GATMA1 |
| Width | 7.47mm |
| Mount Type | Surface |
| Series | IPD068N10N3 G |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 12.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Surface mount design with TO-252 5-pin package ensures compact integration.
- Maximum power dissipation rated at 150 W for high thermal efficiency.
- Low drain-source resistance enhances conduction efficiency.
- Operates reliably between -55°C to 175°C ensuring durability in harsh conditions.
- Halogen free and lead (Pb) free plating for environmentally friendly application.
- Optimized for low switching and conduction losses to improve overall efficiency.
- Ideal for Class D audio amplifiers and isolated DC-DC converters.
- Suitable for motor control in 48V-80V systems like domestic vehicles and power tools.
Product Description
Infineon IPD068N10N3GATMA1 N-Channel MOSFET is a power semiconductor device tailored for applications requiring high current and voltage handling capabilities, featuring a robust surface mount TO-252 5-pin package.
This MOSFET supports a maximum continuous drain current of 90A and a maximum drain-source voltage of 100V, making it suitable for high-performance power management tasks.
The device delivers a maximum power dissipation of 150W, and a very low drain-source resistance (12.3mΩ) which reduces conduction losses, directly improving efficiency in power circuits.
Operating temperature ranges from -55°C to a maximum of 175°C guarantee stability in demanding industrial environments, with the added benefit of halogen-free and lead (Pb)-free plating enhancing environmental compatibility.
Its low typical gate charge of 51nC enables rapid switching performance, important for applications requiring fast and efficient switching such as synchronous rectifiers and motor control.
Engineered for reduced board space consumption, it fits compact electronic designs.
Application areas include Class D audio amplifiers, isolated DC-DC converters for telecom and data communication systems, motor control in the 48V-80V range for vehicles and power tools, and O-ring switches and circuit breakers in 48V systems.
Infineon ensures device longevity and efficiency with excellent gate charge and switching characteristics, suitable for both industrial and commercial electronics. Surface mount TO-252 5-pin package maximizes board space utilization.
High current handling capability supports demanding load conditions. Low Rds(on) reduces power losses and enhances efficiency. Wide operating temperature range ensures reliability in various environments. Environmentally friendly lead-free plating and halogen free composition.
Optimized gate charge characteristics improve switching efficiency. Applications include audio amplifiers, DC-DC converters, and motor controls. Designed for long life and dependable performance. Discover more semiconductor and power MOSFET solutions on EnvMart to suit a wide variety of industrial and commercial electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPD068N10N3GATMA1 is 90A.
This MOSFET can handle a maximum drain-source voltage of 100V.
The maximum power dissipation rating for this model is 150W.
It operates reliably between -55°C and 175°C.
The maximum drain-source resistance (Rds(on)) is 12.3mΩ, which helps reduce conduction losses.
This model comes in a TO-252 5-pin surface mount package.
The typical gate charge (Qg) at Vgs is 51nC, enabling rapid switching performance.
It features halogen-free and lead (Pb)-free plating, making it environmentally friendly.
This MOSFET is optimized for Class D audio amplifiers, isolated DC-DC converters, and motor control in 48V-80V systems.
The dimensions are 2.41mm in height, 6.73mm in length, and 7.47mm in width.
The maximum gate-source voltage (Vgs) is 20V.
It complies with ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007 standards.
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