$0.54
$0.53
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon IPL N-Channel MOSFET 9.4 A 700 V 5-Pin ThinPAK 5x6 IPLK70R2K0P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.35mm |
| Model | IPLK70R2K0P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 25.5W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 900mV |
Key Features
- The ThinPAK 5x6 package features a very small footprint of 5x6 mm² and a low height profile of 1 mm.
- It is designed for very low parasitic parameters, enabling smaller form factors and higher power density.
- Incorporates integrated ESD protection diode to enhance reliability.
- Rated for a maximum power dissipation of 25.5 W with excellent thermal performance.
- Complies with RoHS standards and automotive AEC-Q101 qualification for industrial applications.
- Maximum gate-source voltage is ±3 V, with a typical gate charge of 80 nC at rated voltage.
- Forward voltage drop is approximately 900 mV ensuring efficient switching.
- Operational temperature range spans from -55°C to 150°C suitable for harsh environments.
Product Description
Infineon IPLK70R2K0P7ATMA1 is a high-performance N-Channel MOSFET designed for power switching applications requiring up to 9.4 A continuous drain current and 700 V drain-source voltage. This device is housed in a ThinPAK 5x6 surface mount package characterized by a compact footprint (5x6 mm²) and a low height of just 1 mm, which aids in achieving compact PCB layouts with high power density.
Its exceptionally low on-resistance (1.2 mΩ maximum) and low switching losses make it ideal for efficient energy conversion in industrial, automotive, and power management circuits. The device includes an integrated ESD protection diode to improve robustness and reliability.
The MOSFET supports a maximum power dissipation of 25.5 W and operates efficiently across an extended temperature range of -55°C to 150°C. It conforms to RoHS environmental directives and meets AEC-Q101 automotive qualification standards, underscoring its suitability for use in rigorous industrial and automotive environments.
Its low gate charge of 80 nC at Vgs and forward voltage of 900 mV contribute to reducing switching losses and thermal stress, making it a benchmark solution for flyback and similar topology power designs.
This component is surface mount ready for automated manufacturing processes and is suitable for applications in industrial power supplies, automotive electronics, and energy-efficient consumer electronics circuits.
The ThinPAK 5x6 package enables minimal PCB area usage with a height of 1 mm. Low parasitic inductance and optimized layout contribute to excellent thermal and electrical performance. The device includes integrated ESD protection diode for system reliability.
Meets RoHS compliance and AEC-Q101 automotive standards for quality assurance. Supports voltage and current requirements common in industrial power switching. Offers robust operation in wide temperature ranges for diverse applications.
Low gate charge and forward voltage enhance energy efficiency in switching applications. Designed for surface mounting in high-density PCB assemblies.
Explore further products in our Electronics & Electricals > Semiconductor > MOSFET category to find complementary devices and optimize your circuit designs with high-quality components from Infineon and other leading manufacturers.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 9.4 A.
This MOSFET has a maximum drain-source voltage rating of 700 V.
It comes in a ThinPAK 5x6 package, with dimensions of 5 mm by 6 mm and a height of 1 mm.
The maximum power dissipation for this MOSFET is 25.5 W.
The operational temperature range spans from -55°C to 150°C.
The typical gate charge at rated voltage is 80 nC.
It complies with RoHS standards and meets AEC-Q101 automotive qualification.
The maximum gate-source voltage is ±3 V.
The forward voltage drop is approximately 900 mV.
The maximum drain-source resistance for this model is 1.2 mΩ.
This model supports surface mounting for easy integration into PCB layouts.
It is suitable for industrial power supplies, automotive electronics, and energy-efficient consumer electronics circuits.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$0.54
$0.53
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent