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Infineon IPL N-Channel MOSFET 107 A 650 V Enhancement Mode 5-Pin ThinPAK 8x8 IPL65R115CFD7AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 24mm |
| Model | IPL65R115CFD7AUMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 8x8 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 107A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1V |
Key Features
- This MOSFET features enhancement mode operation for efficient switching.
- It supports a maximum continuous drain current of 107 amperes and a maximum voltage of 650 volts.
- Designed for industrial resonant topologies including server, telecom, solar, and EV charging applications.
- ThinPAK 8x8 surface mount package ensures compactness and high power density.
- Contains enhanced features such as reduced gate charge and improved turn-off behaviour for higher efficiency.
- Supports operation from -40°C to 150°C, ensuring reliable performance in harsh environments.
- Complies with RoHS and AEC-Q101 automotive standard certifications.
- Has a maximum power dissipation of 171 watts to handle demanding loads.
Product Description
Infineon IPL65R115CFD7AUMA1 is a high-efficiency N-Channel MOSFET designed for industrial and automotive applications. It supports a maximum continuous drain current of 107 A and a maximum drain-source voltage of 650 V, implemented in a 5-pin ThinPAK 8x8 surface mount package for compact and robust installation.
The device operates in enhancement mode, offering significantly reduced switching losses, improved turn-off behavior, and lower reverse recovery charge compared to predecessor models. These features enable higher efficiency and power density in resonant topology circuits typical in server power supplies, telecom equipment, solar inverters, and electric vehicle charging stations.
This MOSFET can operate reliably across a wide temperature range from -40°C to 150°C, suitable for demanding industrial environments. The gate voltage tolerance is up to 30 V, and the device exhibits a typical forward voltage drop of 1 V, making it energy-efficient.
With a power dissipation capability of 171 W and a typical gate charge of 80 nC at 80 V gate-source voltage, this component supports fast switching speeds and high load currents. Compliance with RoHS and the AEC-Q101 automotive standard underscores its suitability for automotive and high-reliability industrial uses.
This MOSFET features enhancement mode operation for efficient switching. Maximum continuous drain current of 107 amperes and voltage of 650 volts. ThinPAK 8x8 surface mount package ensures compactness and durability. Reduced gate charge and improved turn-off enable higher efficiency.
Wide operating temperature range from -40 to 150 degrees Celsius. Meets RoHS and automotive AEC-Q101 standards. Maximum power dissipation rating of 171 watts. Typical gate charge of 80 nC at 80 V gate voltage. Low forward voltage drop of approximately 1 volt.
This MOSFET is ideal for applications in industrial power supplies, servers, telecommunications, solar energy systems, and electric vehicle charging stations where efficiency, power density, and reliable operation under varying temperatures are critical.
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Frequently Asked Questions
The maximum continuous drain current for this model is 107 amperes.
It can handle a maximum drain-source voltage of 650 volts.
This MOSFET is housed in a ThinPAK 8x8 surface mount package.
The operating temperature range for this model is from -40°C to 150°C.
It has a maximum power dissipation rating of 171 watts.
The typical gate charge at 80 V gate-source voltage is 80 nC.
This model complies with the AEC-Q101 automotive standard.
The typical forward voltage drop is approximately 1 volt.
It utilizes an N-channel configuration.
The maximum gate-source voltage is up to 30 volts.
This model is suitable for applications in industrial power supplies, servers, telecommunications, solar energy systems, and electric vehicle charging stations.
The maximum drain-source resistance is 95 mΩ.
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