DiodesZetex N-Channel MOSFET 500 mA 100 V Enhancement Mode 4-Pin SOT-223 ZVN2110GTA

DiodesZetex ZVN2110GTA is an N-channel enhancement mode MOSFET designed for switching and amplification applications operating at a maximum continuous drain current of 500 mA and maximum drain-source voltage of 100 V. Packaged in a compact 4-pin SOT-223 surface mount package, it offers efficient power dissipation of up to 2 W and low drain-source resistance of 4 Ω, enabling low power losses in circuit designs.

Designed to operate across a broad temperature range of -55°C to 150°C, this MOSFET is suitable for industrial, automotive, and electronic applications requiring robust component performance in harsh environments. The device also complies with key automotive industry standards including AEC-Q200, AEC-Q101, and AEC-Q100, ensuring reliability in safety-critical use cases.

The maximum gate-source voltage rating of -20 V to +20 V offers broad flexibility for drive electronics design while the small physical footprint (length 6.7 mm, width 3.7 mm, height 1.65 mm) is ideal for space-constrained PCB layouts. Its low forward voltage and efficient switching characteristics make it applicable for power management, signal switching, and other semiconductor device applications.

This MOSFET operates in enhancement mode for efficient switching applications. Maximum continuous drain current rating is 500 mA for reliable performance. Drain-source voltage rating up to 100 V supports medium voltage applications.

Compact SOT-223 package with 4 pins ensures ease of PCB assembly and thermal dissipation. Low drain-source resistance (4 Ω max) reduces power loss during operation. Maximum power dissipation of 2 W suitable for moderate power usage.

Wide operating temperature range from -55°C to 150°C enhances durability in harsh environments. Complies with automotive standards AEC-Q200, AEC-Q101, and AEC-Q100 for quality and reliability. Maximum gate-source voltage of -20 to +20 V allows flexibility in drive voltage design.

Package dimensions approximately 6.7 mm length, 3.7 mm width, and 1.65 mm height.

This MOSFET is ideal for automotive electronics, industrial control systems, semiconductor power management, and general-purpose electronic circuit designs. Its reliability and compliance with automotive standards extend its use into commercial vehicle control units and safety-critical modules.

Select DiodesZetex components for trusted high-quality semiconductor solutions with excellent thermal and electrical performance. Explore more MOSFET and semiconductor products on EnvMart for your industrial and electronic design requirements.