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DiodesZetex N-Channel MOSFET 100 mA 100 V Enhancement Surface Mount 3-Pin SOT-23 Package ZVN3310FTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZVN3310FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 10Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This MOSFET features a 3-pin SOT-23 surface mount package suitable for compact electronic designs.
- The device operates with enhancement channel mode ensuring efficient switching performance.
- It supports a maximum power dissipation of 330 mW for reliable operation under load.
- The pin count of 3 facilitates easy integration into circuits requiring low current switching.
- Operating temperature ranges from -55°C to 150°C, accommodating harsh environment applications.
- Maximum gate-source voltage rating of -20 to +20 V provides voltage tolerance for control signals.
- Its dimensions of approximately 3.05 mm length, 1.4 mm width, and 1 mm height meet compact PCB requirements.
- Standards compliance includes automotive qualifications AEC-Q101, AEC-Q100, and AEC-Q200 for automotive system suitability.
Product Description
DiodesZetex ZVN3310FTA is an N-Channel Enhancement Mode MOSFET designed for low current switching applications with a maximum continuous drain current of 100 mA and a maximum drain-source voltage of 100 V.
Its compact 3-pin SOT-23 surface mount packaging allows ease of integration in PCB layouts requiring minimal space, ideal for electronic manufacturing and industrial equipment. The device operates efficiently with an enhancement channel mode and supports a maximum power dissipation of 330 mW, ensuring stable performance under moderate load conditions.
It is suitable for use in electronic circuits requiring reliable switching at varied temperatures ranging from -55°C to 150°C, making it appropriate for automotive and harsh environment applications.
The maximum gate-source voltage of ±20 V provides adequate margin for signal control while maintaining device integrity. This MOSFET features a 3-pin SOT-23 surface mount package suitable for compact electronic designs. Enhancement channel mode ensures efficient switching performance.
Maximum power dissipation of 330 mW supports steady thermal handling. Operating temperature range from -55°C to 150°C for wide environmental tolerance. Automotive standards compliance including AEC-Q101, AEC-Q100, and AEC-Q200 certifies its quality for automotive use.
Compact physical dimensions optimize PCB space usage. Maximum gate-source voltage rating of -20 to +20 V for control flexibility.
This product is widely used in electronics manufacturing, automotive system circuits, and various industrial equipment applications where reliable N-channel MOSFET performance is required.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 mA.
The maximum drain-source voltage rating for this N-channel MOSFET is 100 V.
It supports a maximum power dissipation of 330 mW.
The dimensions of the SOT-23 package are approximately 3.05 mm in length, 1.4 mm in width, and 1 mm in height.
The operating temperature range for the ZVN3310FTA is from -55°C to 150°C.
The maximum gate-source voltage rating is ±20 V.
This model uses an N-channel enhancement mode.
It complies with automotive standards AEC-Q101, AEC-Q100, and AEC-Q200.
This MOSFET has a pin count of 3.
It supports surface mounting, suitable for compact electronic designs.
The maximum drain-source resistance is 10 Ω.
It is typically used in electronic circuits requiring reliable switching, particularly in automotive and industrial equipment applications.
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