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DiodesZetex N-Channel Enhancement MOSFET 4 A, 20 V, 3-Pin SOT-23 DMN2056U-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3mm |
| Model | DMN2056U-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMN2056U |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 85mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 940mW |
| Typical Gate Charge Qg @ Vgs | 4.3nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 700mV |
Key Features
- This MOSFET features a surface mount SOT-23 package suitable for compact PCB assembly.
- Maximum continuous drain current is rated at 4 amperes for efficient power handling.
- The device operates with a maximum drain-source voltage of 20 volts, ensuring suitability for low voltage applications.
- It provides low drain-source resistance of 85 milliohms to minimize conduction losses.
- The MOSFET supports operating temperatures ranging from -55°C up to 150°C.
- Typical gate charge is 4.3 nanocoulombs at gate-source voltage, enabling fast switching.
- Maximum power dissipation is rated at 940 milliwatts, allowing reliable thermal management.
- It complies with automotive standard AEC-Q101, making it reliable for automotive electronics.
Product Description
DiodesZetex DMN2056U-7 is a high-performance N-Channel Enhancement mode MOSFET designed for efficient switching and amplification in low voltage electronic circuits. With a maximum continuous drain current of 4 amperes and drain-source voltage of 20 volts, this device is optimized for power management and control applications in industrial and automotive environments.
Encapsulated in a compact 3-pin surface-mount SOT-23 package, the MOSFET offers minimal footprint ideal for densely populated printed circuit boards. The device features a low drain-source resistance (85 mΩ) that reduces conduction losses and enhances thermal efficiency. The high maximum power dissipation rating of 940 milliwatts ensures reliable operation under demanding thermal conditions.
Its operating temperature range from -55°C to 150°C, along with compliance to the automotive AEC-Q101 standard, confirms the device's robustness for both commercial and automotive electronic applications.
Additional electrical characteristics include a typical gate charge of 4.3 nC at rated gate-source voltage and maximum gate-source voltage tolerance of ±8 volts. Forward voltage drop is nominally 700 mV.
This MOSFET is typically employed in DC-DC converters, power switches, motor controls, load switches, and general switching applications in industrial, automotive, and power electronics systems.
This MOSFET features a surface mount SOT-23 package suitable for compact PCB assembly. Maximum continuous drain current rated at 4 amperes for efficient power handling. Operating drain-source voltage up to 20 volts for low voltage applications.
Low drain-source resistance of 85 milliohms minimizing conduction losses. Wide operating temperature range from -55°C to 150°C for reliability. Typical gate charge of 4.3 nanocoulombs enabling fast switching. Maximum power dissipation rating of 940 milliwatts.
Automotive standard compliant (AEC-Q101) quality for automotive use. Compact dimensions (3 mm x 1.4 mm x 1 mm) suitable for space-sensitive designs. Explore more semiconductor and discrete component solutions suitable for industrial electronics and power management in the EnvMart marketplace.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 4 amperes.
It operates with a maximum drain-source voltage of 20 volts, making it suitable for low voltage applications.
This MOSFET is encapsulated in a compact 3-pin surface-mount SOT-23 package.
The operating temperature range for the DMN2056U-7 is from -55°C to 150°C.
The typical gate charge is 4.3 nanocoulombs at the rated gate-source voltage.
The maximum power dissipation for this model is rated at 940 milliwatts.
It features a low drain-source resistance of 85 milliohms, which helps minimize conduction losses.
It complies with the automotive standard AEC-Q101, ensuring reliability for automotive electronics.
The nominal forward voltage drop is 700 millivolts.
The dimensions of this model are 3 mm in length, 1.4 mm in width, and 1 mm in height.
This MOSFET is typically employed in DC-DC converters, power switches, motor controls, and load switches.
The maximum gate-source voltage tolerance is ±8 volts.
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