DiodesZetex N-Channel MOSFET, 7 A, 30 V Enhancement, 6-Pin UDFN Package DMN3042LFDF-7

DiodesZetex DMN3042LFDF-7 is a high-performance N-Channel MOSFET designed for industrial and commercial electronic applications. This device supports a maximum continuous drain current of 7 A and a maximum drain-source voltage of 30 V, allowing it to handle moderate power control tasks effectively. Packaged in a compact 6-pin UDFN form factor with a surface mount design, it optimizes board space without compromising electrical performance.

The transistor operates in enhancement mode, providing efficient switching capabilities which is crucial for power management circuits in power supplies, automotive electronics, and motor control. It features a maximum power dissipation rating of 2.1 W, making it reliable for consistent thermal operation within the specified maximum operating temperature range from -55°C to 150°C.

The typical gate charge of 13.3 nC at the specified gate-source voltage improves switching speed and reduces switching losses, important for high-frequency applications. Its low maximum drain-source resistance of 50 mΩ minimizes conduction losses, thereby improving overall circuit efficiency and reducing heat generation.

This MOSFET complies with the automotive standard AEC-Q101, endorsing its suitability for automotive and other demanding industrial environments. With package dimensions of 2.05 mm in length and width, and a height of 580 μm, it fits well in compact Printed Circuit Board (PCB) layouts. The maximum gate-source voltage tolerance of -12 V to +12 V provides effective gate oxide protection during operation.

This product finds applications in power management, switching regulators, DC-DC converters, load switches, and various industrial electronics. Its reliable performance under harsh conditions makes it ideal for use in industrial control systems, automation, HVAC controls, and embedded systems.

Choose DiodesZetex DMN3042LFDF-7 for robust, compact, and efficient MOSFET solutions that meet stringent industrial requirements. Explore more MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart for your industrial and commercial needs.

This MOSFET uses enhancement mode channel type providing efficient switching performance. The device has a maximum power dissipation of 2.1 W ensuring reliability under load. Typical gate charge at Vgs is 13.3 nC for improved gate drive control.

Operating temperature ranges from -55°C to 150°C suitable for diverse environments. Features a low maximum drain-source resistance of 50 mΩ to minimize conduction losses. Compatible with automotive grade AEC-Q101 standards ensuring high quality.

Dimensions include length and width of 2.05 mm each, with a height of 580 μm. Maximum gate-source voltage withstands between -12 V and +12 V providing robust gate protection. Navigate EnvMart’s Electronics & Electricals section to find more semiconductors and MOSFETs to suit your engineering requirements.