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| Country of Origin | India |
|---|---|
| Brand | Texas Instruments |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | CSD25404Q3T |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | NexFET |
| Maximum Operating Temperature | 150°C |
| Package Type | VSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 104A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 10.8nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1V |
Texas Instruments CSD25404Q3T NexFET Type P-Channel Power MOSFET is engineered for reliable high-current and low-voltage switching applications. With a continuous drain current rating of 104 A and a drain source voltage rating of 20 V, this MOSFET is ideal for power management in compact electronics requiring surface-mounted devices.
The device features an enhancement mode channel and a low maximum drain-source resistance of 150 milliohms, contributing to improved efficiency and reduced heat generation. The 8-pin VSON package enables a compact form factor with dimensions of 3.4 mm by 3.4 mm in length and width, and a height of 1.1 mm, making it suitable for dense PCB layouts.
It supports a maximum power dissipation of 96 watts and an operating temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and electronic system applications. The typical gate charge of 10.8 nC facilitates fast, efficient switching and helps minimize power losses during operation.
The gate to source voltage rating of ±12 V ensures compatibility with a wide range of gate drive voltages without risk of damage. This MOSFET's robust thermal and electrical characteristics enable its use in power conversion, motor control, and load switch circuits.
High-performance P-channel NexFET MOSFET with robust electrical ratings. Low Rds(on) resistance ensures energy efficient operation. Compact VSON package suitable for surface-mounted applications. Wide temperature tolerance for industrial system compatibility.
Reliable with maximum power dissipation supports demanding loads. Optimized gate charge for high-speed switching capability. Ideal for power management and control in various electronic systems.
This Texas Instruments power MOSFET is widely used in industrial electronics, power converters, automotive electronics, and consumer device power management. It fits seamlessly into designs needing efficient high current switching with low losses and compact footprint.
Explore the Electronics & Electricals > Semiconductor > Power MOSFET category for more components from Texas Instruments and comparable advanced MOSFET solutions on EnvMart.
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