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Infineon OptiMOS N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1

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Infineon OptiMOS N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1

Name: Infineon OptiMOS N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1
Brand: Infineon
SKU: 143570
Price: 4.64 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.4mm
Length	10.1mm
Model	IPT004N03LATMA1
Width	10.58mm
Mount Type	Surface
Series	OptiMOS
Maximum Operating Temperature	150°C
Package Type	HSOF
Minimum Operating Temperature	-55°C
Pin Count	9
Channel Type	N
Maximum Continuous Drain Current Id	300A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	500μΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300W
Typical Gate Charge Qg @ Vgs	252nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1V

Key Features

This MOSFET features an enhancement mode channel with ultra low drain source resistance of 500 micro-ohms.
Designed for surface mount applications offering high power dissipation up to 300 W while operating up to 150°C.
Typical gate charge at Vgs is 252 nC with a maximum gate source voltage range of -20 V to +20 V.
Package dimensions include length 10.1 mm, width 10.58 mm, and height 2.4 mm for compact design.
The device is suited for high performance power management and computing applications requiring energy efficiency and density.

Product Description

Infineon IPT004N03LATMA1 is a high-performance OptiMOS N-Channel MOSFET designed for demanding power electronics applications. This enhancement mode transistor supports a maximum continuous drain current of 300 A and a drain source voltage of 30 V, suited for efficient power switching and regulation.

The 9-pin HSOF package offers compact surface mounting with dimensions of 10.1 mm length, 10.58 mm width, and 2.4 mm height. It assures excellent thermal management with a maximum power dissipation of 300 W, allowing operation in harsh industrial environments up to 150°C.

With an ultra-low on-resistance (Rds) of 500 micro-ohms and a typical gate charge (Qg) of 252 nC at standard gate voltages, this MOSFET provides fast switching and reduced power loss for improved system efficiency. The device’s gate source voltage rating ensures reliable operation between -20 V and +20 V. Its forward voltage drop is typically 1 V.

This OptiMOS transistor family is engineered for applications in power management, computing voltage regulation, and automotive electronics, meeting rigorous energy efficiency and power density requirements. It is a surface mount device ideal for compact and lightweight electronic designs.

Enhancement mode N-Channel MOSFET for high efficiency switching. Maximum continuous drain current of 300 A for heavy load applications. Low Rds(on) of 500 micro-ohms minimizes conduction losses. Compact 9-pin HSOF package compatible with surface mount technology.

High power dissipation rating of 300 W supports robust designs. Wide operating temperature range from -55°C to 150°C ensures durability.

Infineon branded OptiMOS series MOSFETs are well-regarded in industrial, laboratory, automotive, and commercial electronics sectors. Their advanced design makes them suitable for power converters, motor drives, and voltage regulation modules. Explore the extensive semiconductor and MOSFET catalog at EnvMart for compatible power devices.