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Infineon CoolMOS P6 N-Channel MOSFET, Enhancement Mode, 37.9 A, 650 V, 278 W Power Dissipation, 4-Pin TO-220 IPP60R099P6XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP60R099P6XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS P6 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 37.9A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 99mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 900mV |
Key Features
- Low RDS(on) of 99 milliohms reduces conduction losses and improves switching efficiency.
- Capable of dissipating up to 278 W for high durability under load.
- Operational temperature range from -55°C to 150°C for high reliability.
- Typical gate charge of 70 nC enables swift switching response.
- Designed for use in hard and soft switching applications in electronic devices.
- ESD protection above 2 kV ensures device safety.
- Suitable for power factor correction stages and industrial automation systems.
- Package type TO-220 allows flexible through-hole mounting.
Product Description
Infineon IPP60R099P6XKSA1 CoolMOS P6 Series N-Channel MOSFET is an enhancement mode device optimized for high-performance power management with 37.9 A continuous drain current and 650 V drain-source voltage rating. The 4-pin TO-220 package facilitates effective mounting in diverse industrial and electronic applications.
This MOSFET features low on-resistance (RDS(on)) of 99 milliohms which significantly improves switching efficiency by minimizing conduction losses and heat generation. It supports power dissipation up to 278 W, making it suitable for robust conditions in power supplies, adapters, and industrial automation systems.
It operates reliably within a wide temperature range of -55°C to 150°C and has typical gate charge of 70 nC, ensuring fast switching with minimal power loss. The device's gate-source voltage rating is from -30 V to +30 V, supporting secure and effective switching control.
Infineon CoolMOS P6 is designed for both hard and soft switching applications including power factor correction (PFC) stages, hard-switching PWM stages, and resonant switching circuits. Enhanced ESD protection exceeding 2 kV provides dependable operation under harsh conditions.
Thermal management by using proper heat sinking is recommended to sustain performance. Parallel configurations benefit from ferrite beads or separate totem poles on the gate for optimized operation and oscillation minimisation.
Low on-resistance optimizes efficiency and reduces power loss. High maximum power dissipation supports demanding industrial use. Broad operating temperature range ensures adaptability. High ESD protection for device reliability.
Flexible TO-220 package for versatile mounting options. Suitable for power converters, adapters, and automation systems. Designed for reliable performance in electronic and mechanical industrial fields. Operates at gate voltage range of -30 V to +30 V.
This MOSFET is an ideal choice for engineers and technicians requiring a durable and efficient power switching component compliant with modern industrial needs. Browse our wide range of Infineon semiconductor devices and related electronics components on EnvMart to find optimal solutions for your power management projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 37.9 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
It can dissipate up to 278 W, making it suitable for demanding applications.
The operational temperature range is from -55°C to 150°C.
The typical gate charge is 70 nC, which enables swift switching response.
The TO-220 package allows for flexible through-hole mounting.
It is designed for hard and soft switching applications, including power factor correction stages and industrial automation systems.
The on-resistance is 99 milliohms, which reduces conduction losses and improves efficiency.
The gate-source voltage rating is from -30 V to +30 V.
The dimensions are 15.95 mm in height, 10.36 mm in length, and 4.57 mm in width.
It features ESD protection exceeding 2 kV, ensuring device safety under harsh conditions.
The country of origin for this model is India.
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