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onsemi N-Channel MOSFET 115 mA, 60 V Enhancement Mode, 3-Pin SOT-23 2N7002

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onsemi N-Channel MOSFET 115 mA, 60 V Enhancement Mode, 3-Pin SOT-23 2N7002

Name: onsemi N-Channel MOSFET 115 mA, 60 V Enhancement Mode, 3-Pin SOT-23 2N7002
Brand: onsemi
SKU: 141862
Price: 0.18 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	930μm
Length	2.92mm
Model	2N7002
Width	1.3mm
Mount Type	Surface
Series	2N7002
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q100, AEC-Q200, AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	115mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	7.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	200mW
Typical Gate Charge Qg @ Vgs	223nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

Compact 3-pin SOT-23 package suitable for surface mounting.
Maximum drain-source resistance of 7.5 ohms ensures efficient switching.
Capable of dissipating up to 200 mW of power safely.
Wide operating temperature range from -55°C to 150°C for reliable performance.
Typical gate charge of 223 nC at Vgs for fast switching applications.
Gate-source voltage tolerance of -20 to +20 V supports robust control signals.
Forward voltage drop of 1.2 V optimizes power efficiency.
Designed according to automotive standards AEC-Q100, AEC-Q200, and AEC-Q101.

Product Description

onsemi 2N7002 is a reliable N-Channel Enhancement Mode MOSFET housed in a compact 3-pin SOT-23 surface mount package. It supports a maximum continuous drain current of 115 mA and can withstand drain-source voltages up to 60 V, making it suitable for low-power switching and amplification applications.

This MOSFET features low on-resistance, with a maximum of 7.5 ohms, contributing to reduced power losses and enhanced efficiency in electronic circuit designs. It is engineered to operate effectively within a broad temperature range from -55°C to 150°C, ensuring stability in harsh environments.

The 2N7002 MOSFET has a typical gate charge of 223 nC at the specified gate-source voltage, enabling fast switching speeds suitable for digital and power management circuits. The device tolerates gate-source voltages up to ±20 V, providing robust handling of control signals without damage risks.

Additional physical dimensions include a length of 2.92 mm, width of 1.3 mm, and height of 930 µm, supporting easy integration into compact electronic assemblies. Although this device is not accompanied by formal standards or approvals beyond automotive compliance, it is manufactured to meet high-quality benchmarks for discrete semiconductor components.

This N-Channel MOSFET is widely used in industrial, automotive, and consumer electronic applications, including power switching, signal amplification, and load driving. It is compatible with automated surface mount assembly processes typical in manufacturing environments.

Compact 3-pin SOT-23 surface mount package. Maximum continuous drain current of 115 mA. Drain-source voltage rating up to 60 V. Maximum drain-source resistance of 7.5 ohms. Power dissipation capacity of 200 mW. Operates from -55°C to 150°C temperature range.

Typical gate charge of 223 nC at specified voltage. Gate-source voltage tolerance of -20 to +20 V. Forward voltage drop of 1.2 V. Meets automotive standards AEC-Q100, AEC-Q200, and AEC-Q101. Explore the onsemi 2N7002 MOSFET and related electronics components in the Semiconductor category at EnvMart for comprehensive product options and technical support.