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onsemi N-Channel MOSFET 220 mA 50 V Enhancement Mode 3-Pin SOT-23 BSS138

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 930μm
Length 2.92mm
Model BSS138
Width 1.3mm
Mount Type Surface
Series BSS138
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100
Channel Type N
Maximum Continuous Drain Current Id 220mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 3.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 360mW
Typical Gate Charge Qg @ Vgs 1.7nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 800mV

Key Features

  • The device uses enhancement mode technology for efficient switching performance.
  • Maximum power dissipation is rated at 360 mW.
  • Typical gate charge is low at 1.7 nC, enabling fast switching.
  • Operating temperature ranges from -55°C to 150°C, suitable for various industrial environments.
  • Maximum drain-source resistance is 3.5 Ω ensuring minimal power loss during operation.
  • Package dimensions are compact with a length of 2.92 mm, width of 1.3 mm, and height of 930 μm.
  • Automotive standards AEC-Q101, AEC-Q200, and AEC-Q100 compliant for high reliability.

Product Description

onsemi BSS138 is a N-Channel Enhancement Mode MOSFET designed for surface mounting applications. This semiconductor device features a low on-resistance and fast switching capability enabled by Fairchild's proprietary DMOS technology, providing rugged and reliable performance for electronic circuits.

With a maximum continuous drain current of 220 mA and a maximum drain-source voltage of 50 V, the BSS138 delivers efficient switching performance suitable for various industrial, automotive, and consumer electronics applications.

The 3-pin SOT-23 package offers a compact footprint ideal for PCB assemblies requiring space optimization. The MOSFET's typical gate charge of 1.7 nC supports high-frequency operation, while its maximum power dissipation of 360 mW ensures durability.

Operating temperature from -55°C to 150°C allows deployment in harsh environments. Compliance with automotive standards AEC-Q101, AEC-Q200, and AEC-Q100 confirms the device's robustness for automotive electronics.

The device uses enhancement mode technology for efficient switching performance. Maximum power dissipation is rated at 360 mW. Typical gate charge is low at 1.7 nC, enabling fast switching. Operating temperature ranges from -55°C to 150°C, suitable for various industrial environments.

Maximum drain-source resistance is 3.5 Ω ensuring minimal power loss during operation. Package dimensions are compact with a length of 2.92 mm, width of 1.3 mm, and height of 930 μm. Automotive standards AEC-Q101, AEC-Q200, and AEC-Q100 compliant for high reliability.

This MOSFET is widely employed in industrial control systems, automotive electronics, consumer devices, and power management circuits where reliable switching and low power loss are critical.

Explore more semiconductor products in EnvMart to meet your industrial, manufacturing, and design requirements.

onsemi N-Channel MOSFET 220 mA 50 V Enhancement Mode 3-Pin SOT-23 BSS138
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Frequently Asked Questions

The maximum continuous drain current for this model is 220 mA.

The maximum drain-source voltage is rated at 50 V.

The typical gate charge is low at 1.7 nC, which enables fast switching.

The package dimensions are 2.92 mm in length, 1.3 mm in width, and 930 μm in height.

The maximum power dissipation is rated at 360 mW.

The operating temperature range is from -55°C to 150°C.

The maximum drain-source resistance is 3.5 Ω, ensuring minimal power loss during operation.

This model complies with automotive standards AEC-Q101, AEC-Q200, and AEC-Q100.

This MOSFET is designed for surface mounting applications.

The channel type is N-channel, utilizing enhancement mode technology.

The maximum gate-source voltage is rated at -20 V to +20 V.

This model is suitable for various industrial, automotive, and consumer electronics applications, particularly in power management circuits.

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