onsemi QFET Type P-Channel MOSFET, 60 V, 19 A, 120 W Power Dissipation, 3-Pin TO-220 FQPF27P06

onsemi FQPF27P06 is a high-performance QFET Type P-Channel MOSFET designed for demanding electronic semiconductor applications requiring a maximum continuous drain current of 19 A and a drain-source voltage of 60 V. Packaged in a robust 3-pin TO-220 through-hole mount, it supports power dissipation up to 120 W, ensuring efficient thermal handling during intensive operational cycles.

Utilizing advanced QFET planar MOSFET technology, this device exhibits low on-resistance and reduced switching losses by minimizing gate charge and output capacitance, which contributes to a superior figure of merit over competing planar MOSFET alternatives.

The device operates in enhancement mode, making it well-suited for power supply regulation, power factor correction (PFC), DC-DC converters, plasma display panel drivers, lighting ballasts, and precise motion control systems in industrial, commercial, and laboratory environments.

Its rugged design supports a broad temperature range from -55°C to a maximum junction temperature of 175°C, enhancing reliability and longevity under harsh conditions. The typical gate charge of 33 nC at Vgs = 3 V allows swift switching, and the device can tolerate gate-source voltages from -25 V up to +25 V, ensuring robustness in transient scenarios.

Physically compact, with a height of 16.3 mm, length of 10.67 mm, and width of 4.7 mm, the MOSFET facilitates easy incorporation into printed circuit boards while maintaining high electrical performance.

This MOSFET operates in enhancement mode with reduced on-state loss due to its low on-resistance. Advanced QFET process technology enhances performance with lower gate charge and output capacitance. Suitable for power supplies, DC-DC converters, power factor correction, lighting ballasts, and motion control applications.

Operating temperature range from -55°C up to 175°C for reliable durability. Provides maximum drain-source resistance of 70 milliohms for efficient conduction. Features a typical gate charge of 33 nC at Vgs = 3 V improving switching speed.

Maximum gate-source voltage tolerance between -25 V and +25 V enhances reliability. Compact physical dimensions of 16.3 mm height, 10.67 mm length, and 4.7 mm width enable easy PCB mounting. Explore the comprehensive range of semiconductor solutions at EnvMart for industrial and commercial electronics engineering projects.