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Infineon OptiMOS 2 N-Channel MOSFET 1.4 A 20 V Enhancement Surface-Mount 3-Pin SC-70 BSS816NWH6327XTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 800μm
Length 2mm
Model BSS816NWH6327XTSA1
Width 1.25mm
Mount Type Surface
Series OptiMOS 2
Maximum Operating Temperature 175°C
Package Type SC-70
Minimum Operating Temperature -40°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.4A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 240mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 0.6nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 1.1V

Key Features

  • Low on-resistance of 240 milliohms reduces conduction losses and heat generation.
  • Maximum power dissipation of 500 milliwatts enables sustained operation under light load.
  • Compact SC-70 3-pin package supports high density board layouts.
  • Wide operating temperature range from -40°C to 175°C suits harsh automotive environments.
  • Typical gate charge of 0.6 nanocoulombs allows fast switching and low gate drive energy.
  • Gate-source voltage limited to ±8 V to protect against excessive drive voltages.
  • Compliant with AEC-Q101 automotive standard for reliability.
  • Ideal for switch stages, load switching, and motor-drive gate control in automotive and industrial applications.

Product Description

Infineon BSS816NWH6327XTSA1 is an OptiMOS 2 Series N-Channel Enhancement Mode MOSFET designed for low-voltage switching in automotive and industrial electronic systems. It features a maximum continuous drain current of 1.4 A and a maximum drain-source voltage of 20 V, packaged in a compact 3-pin SC-70 surface-mount form factor.

This device offers a low on-resistance of 240 milliohms which significantly reduces conduction losses and heat dissipation, enabling energy-efficient performance. The 500 milliwatt maximum power dissipation permits stable operation under light loads.

Operating temperatures range from -40°C to 175°C, making it suitable for harsh environments such as under-the-hood automotive locations. The typical gate charge of 0.6 nC facilitates rapid switching with reduced switching losses, improving efficiency in systems with frequent transitions. The gate-source voltage limit of ±8 V ensures protection against excessive voltages.

The SC-70 surface-mount package minimizes PCB area usage and supports automated assembly for high-density board designs. This MOSFET complies with the AEC-Q101 automotive standard, assuring quality and robustness for automotive applications.

Applications include switch stages in automotive sensor modules, load switching in 12 V auxiliary circuits, battery management peripherals, motor-drive gate stages for low current, and signal-level power control in infotainment systems.

Low on-resistance reduces conduction losses. Compact surface-mount SC-70 package. Wide temperature range for automotive environments. Fast switching with low gate charge. Protective gate-source voltage limits. Automotive grade AEC-Q101 compliance.

Suitable for sensor modules, load switching, and motor control. Optimized for high-density board layouts. Explore more semiconductor and MOSFET products at EnvMart for industrial, automotive, and electronic manufacturing solutions.

Infineon OptiMOS 2 N-Channel MOSFET 1.4 A 20 V Enhancement Surface-Mount 3-Pin SC-70 BSS816NWH6327XTSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.4 A.

The maximum drain-source voltage is 20 V.

It features a low on-resistance of 240 milliohms, which reduces conduction losses.

The typical gate charge is 0.6 nanocoulombs, allowing for fast switching and low gate drive energy.

This model comes in a compact SC-70 3-pin surface-mount package.

The operating temperature range is from -40°C to 175°C, suitable for harsh automotive environments.

It complies with the AEC-Q101 automotive standard for reliability.

The maximum power dissipation is 500 milliwatts, allowing for sustained operation under light load.

The dimensions are 2 mm in length, 1.25 mm in width, and 800 μm in height.

It is suitable for switch stages in automotive sensor modules, load switching, and motor-drive gate control.

The gate-source voltage is limited to ±8 V to protect against excessive drive voltages.

This model utilizes an N-channel enhancement mode.

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