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onsemi Bipolar Transistor PNP 500 mA 300 V 20 W TO-225 Package 3-Pin MJE350G

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onsemi Bipolar Transistor PNP 500 mA 300 V 20 W TO-225 Package 3-Pin MJE350G

Name: onsemi Bipolar Transistor PNP 500 mA 300 V 20 W TO-225 Package 3-Pin MJE350G
Brand: onsemi
SKU: 138668

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Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	27.26mm
Length	8.3mm
Model	MJE350G
Width	3.45mm
Mount Type	Through Hole
Series	MJE350
Maximum Operating Temperature	150°C
Package Type	TO-225
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-300V
Minimum DC Current Gain hFE	30
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	3V
Maximum Collector Base Voltage VCBO	-300V
Maximum Power Dissipation Pd	20W
Maximum DC Collector Current Idc	-500mA
Transistor Configuration	Single

Key Features

The transistor features a single transistor configuration designed for through-hole mounting.
It supports a minimum DC current gain (hFE) of 30 ensuring reliable amplification.
Designed to operate within temperature ranges from -65°C to 150°C.
Maximum voltage limits include 300 V collector base voltage and 3 V emitter base voltage.
The compact dimensions are 8.3 mm length, 27.26 mm height, and 3.45 mm width.
The transistor is not compliant with automotive standards and lacks specific approvals.
It is ideal for applications requiring durable and efficient PNP bipolar transistors in electronic and power circuits.

Product Description

onsemi MJE350G Bipolar Transistor is a PNP transistor designed for applications requiring a maximum DC collector current of 500 mA and collector emitter voltage up to 300 V. It comes in a TO-225 package with 3 pins suitable for through-hole mounting.

This single transistor configuration provides reliable performance with a minimum DC current gain of 30, enabling efficient amplifier applications. The device supports a maximum power dissipation of 20 W, making it suitable for a variety of power electronic applications.

The transistor operates reliably within a temperature range from -65°C to 150°C, ensuring durability in demanding environmental conditions. Voltage limitations include a maximum collector base voltage of 300 V and emitter base voltage of 3 V. The physical dimensions include a length of 8.3 mm, height of 27.26 mm, and width of 3.45 mm, making it compact for PCB integration.

This product does not carry automotive certification nor specific approvals but is widely used in industrial, electronic component manufacturing, and power control applications. The transistor features a single configuration optimized for through-hole mounting.

Supports high collector emitter voltage and current ratings. Ensures operational stability in a wide temperature range. Compact TO-225 package enhances PCB design flexibility. Suitable for amplifier circuits and power applications.

Reliable for durable electronics manufacturing. Ideal choice for electronic component suppliers and engineers. Discover a wide range of semiconductors and Bipolar Transistors at EnvMart, the trusted platform for industrial electronics components.