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onsemi Small Signal NPN Transistor 100 mA 45 V 3-Pin SOT-23 BCW72LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.94mm
Length 2.9mm
Model BCW72LT1G
Width 1.3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • Supports maximum collector current of 100 mA for light signal amplification.
  • Maximum collector-emitter voltage rating of 45 V ensures safe operation in low voltage circuits.
  • Packaged in compact SOT-23 surface mount package suitable for automated PCB assembly.
  • Has a minimum DC current gain (hFE) of 200, providing reliable amplification.
  • Designed for operation in temperatures ranging from -55°C to 150°C.
  • Automotive-grade quality with AEC-Q101 certification.
  • Maximum power dissipation is 300 mW, making it energy efficient for small signal applications.
  • Maximum transition frequency of 300 MHz suitable for high-frequency switching applications.

Product Description

onsemi BCW72LT1G is a small signal NPN bipolar transistor designed for efficient amplification and switching in electronic circuits. It supports a maximum collector current of 100 mA with a collector-emitter voltage of up to 45 V, making it ideal for low power signal applications.

Packaged in a small 3-pin SOT-23 surface mount form factor, the BCW72LT1G enables high-density PCB layouts and automated manufacturing processes. The transistor exhibits a minimum DC current gain (hFE) of 200, ensuring effective amplification and reliable performance in various electronic devices.

Operating temperature range from -55°C to 150°C ensures durability and stability in demanding environments including automotive electronics, industrial control systems, and consumer electronic devices. This transistor is also qualified to the AEC-Q101 automotive standard, affirming its robustness for automotive applications.

With a maximum power dissipation of 300 mW and a transition frequency of 300 MHz, the BCW72LT1G supports high-speed switching suitable for signal processing and amplification tasks.

Maximum collector current of 100 mA. Maximum collector-emitter voltage of 45 V. Compact SOT-23 surface mount package. Minimum current gain hFE of 200. Operating temperature range -55°C to 150°C. AEC-Q101 automotive qualified.

Maximum power dissipation of 300 mW. High transition frequency of 300 MHz. 3-pin configuration for easy PCB integration.

This transistor is well suited for applications in electronic circuits that require compact design, reliable switching and amplification, such as automotive electronics, instrumentation, telecommunications, and industrial electronics.

Explore more semiconductor components on EnvMart to find ideal parts for your electronic design and manufacturing needs.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal NPN Transistor 100 mA 45 V 3-Pin SOT-23 BCW72LT1G
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Frequently Asked Questions

The maximum collector current of this model is 100 mA, making it suitable for light signal amplification.

It operates within a temperature range of -55°C to 150°C, ensuring stability in various environments.

This transistor is packaged in a compact SOT-23 surface mount package, suitable for automated PCB assembly.

The BCW72LT1G has a minimum DC current gain (hFE) of 200, providing reliable amplification.

The maximum collector-emitter voltage rating is 45 V, ensuring safe operation in low voltage circuits.

It has a maximum power dissipation of 300 mW, making it energy efficient for small signal applications.

The maximum transition frequency is 300 MHz, suitable for high-frequency switching applications.

This transistor is qualified to the AEC-Q101 automotive standard, affirming its suitability for automotive applications.

The dimensions are 2.9 mm in length, 1.3 mm in width, and 0.94 mm in height.

The maximum emitter-base voltage (VEBO) is 5 V.

This model features a 3-pin configuration, facilitating easy integration into PCB layouts.

The transistor is of NPN polarity, which is common for small signal applications.

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