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onsemi Small Signal NPN Transistor 100 mA 65 V 3-Pin SOT-23 BC846ALT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.64mm
Length 3.04mm
Model BC846ALT1G
Width 1.11mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Nexperia BC846A,215 Transistor, 100 mA NPN, 65 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • Maximum DC collector current of 100 mA ensures efficient low power switching.
  • Collector emitter voltage rated at 65 V for robust electrical performance.
  • Compact 3-pin SOT-23 surface mount package suitable for space-constrained designs.
  • High transition frequency of 100 MHz for fast switching applications.
  • Minimum DC current gain (hFE) of 110 provides reliable amplification characteristics.
  • Maximum power dissipation of 300 mW supports stable operation.
  • Automotive qualified to AEC-Q101 standard enhancing reliability in automotive systems.
  • Maximum operating temperature up to 150°C for durable performance in harsh environments.

Product Description

onsemi BC846ALT1G Small Signal NPN Transistor is engineered for reliable low-noise amplification and switching in various electronic applications. It supports a maximum collector current of 100 mA and a maximum collector emitter voltage of 65 V, making it suitable for low-power electronics circuits.

Packaged in the compact 3-pin SOT-23 surface mount configuration, it offers ease of integration in space-sensitive designs. The transistor features a high transition frequency of 100 MHz and a minimum DC current gain of 110, ensuring efficient high-frequency operation.

Designed to meet the rigorous automotive AEC-Q101 qualification, the BC846ALT1G delivers consistent performance under harsh automotive and industrial environments, including temperatures up to 150°C. Its maximum power dissipation rating of 300 mW supports reliable thermal management during operation.

Its small physical dimensions (3.04 mm length, 1.11 mm width, and 2.64 mm height) allow compact PCB layouts, making it ideal for modern electronics, industrial controls, and automotive systems.

Maximum DC collector current of 100 mA ensures efficient low power switching. Collector emitter voltage rated at 65 V for robust electrical performance. Compact 3-pin SOT-23 surface mount package suitable for space-constrained designs.

High transition frequency of 100 MHz for fast switching applications. Minimum DC current gain (hFE) of 110 provides reliable amplification characteristics. Maximum power dissipation of 300 mW supports stable operation. Automotive qualified to AEC-Q101 standard enhancing reliability in automotive systems.

Maximum operating temperature up to 150°C for durable performance in harsh environments. Small dimensions (Length 3.04 mm, Width 1.11 mm, Height 2.64 mm) optimize PCB layout.

This transistor is ideal for applications including industrial control circuits, signal amplification, automotive electronics, and communication devices where space and performance are critical.

Explore more onsemi Bipolar Transistors and discrete semiconductors in EnvMart’s comprehensive Electronics & Electricals catalog.

onsemi Small Signal NPN Transistor 100 mA 65 V 3-Pin SOT-23 BC846ALT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, ensuring efficient low power switching.

The collector-emitter voltage is rated at 65 V, providing robust electrical performance.

It comes in a compact 3-pin SOT-23 surface mount package, suitable for space-constrained designs.

The maximum operating temperature is up to 150°C, allowing for durable performance in harsh environments.

This unit features a high transition frequency of 100 MHz, making it suitable for fast switching applications.

The minimum DC current gain (hFE) is 110, which provides reliable amplification characteristics.

The maximum power dissipation for this model is 300 mW, supporting stable operation during use.

It is qualified to the AEC-Q101 standard, enhancing reliability in automotive systems.

The dimensions are 3.04 mm in length, 1.11 mm in width, and 2.64 mm in height, optimizing PCB layouts.

The maximum emitter-base voltage (VEBO) is 6 V.

It is suitable for applications including industrial control circuits, signal amplification, automotive electronics, and communication devices.

The maximum collector-base voltage (VCBO) is rated at 80 V.

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