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onsemi P-Channel MOSFET 12 A, 60 V Enhancement Mode, 3-Pin TO-252 Package NTD2955

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onsemi P-Channel MOSFET 12 A, 60 V Enhancement Mode, 3-Pin TO-252 Package NTD2955

Name: onsemi P-Channel MOSFET 12 A, 60 V Enhancement Mode, 3-Pin TO-252 Package NTD2955
Brand: onsemi
SKU: 138642

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.38mm
Length	6.73mm
Model	NTD2955
Width	6.22mm
Mount Type	Surface
Series	NTD2955
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	12A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	180mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	55W
Typical Gate Charge Qg @ Vgs	15nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.25V

Key Features

Operates as a P-Channel MOSFET suitable for surface mount applications.
Maximum power dissipation rated at 55 W for efficient thermal handling.
Features low drain-source resistance of 180 mΩ to minimize conduction losses.
Supports operation over a wide temperature range from -55°C to 175°C.
Includes automotive-grade AEC-Q101 certification ensuring reliability in automotive environments.
Typical gate charge of 15 nC enables fast switching performance.
Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height optimize PCB space usage.
Maximum gate-source voltage of ±20 V provides robust gate-drive tolerance.

Product Description

onsemi NTD2955 is a Type P-Channel MOSFET offered in a 3-pin TO-252 surface mount package designed for power switching and amplification purposes in electronic circuits. It supports a maximum continuous drain current of 12 A and a maximum drain-source voltage rating of 60 V, making it suitable for medium-power applications in automotive, industrial, and consumer electronics.

This MOSFET operates in enhancement mode and provides a low typical forward voltage of 1.25 V to ensure efficient conduction. Its maximum power dissipation of 55 W allows for robust operation under high load conditions with adequate thermal management. The device is qualified for automotive use according to the AEC-Q101 standard, assuring high reliability and quality control for critical applications.

The compact TO-252 package measures 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height, providing a compact footprint suitable for surface mounting on printed circuit boards. It features a low typical gate charge of 15 nanocoulombs, enabling quick switching transitions and reducing switching losses. The maximum operating temperature range from -55°C to 175°C supports use in harsh environments.

The NTD2955 MOSFET’s low drain-source resistance of 180 milliohms helps extend battery life and increase system efficiency. The device can tolerate gate-source voltages ranging from -20 V to +20 V, offering flexibility in gate drive design.

Operates reliably in industrial, automotive, and consumer electronics applications. Suitable for power management, DC-DC converters, and switching circuits. Designed for surface mount assembly processes enhancing manufacturing efficiency.

Qualified to automotive AEC-Q101 standards ensuring durability and robustness. Compact size minimizes PCB space consumption in complex circuit designs.

This component is ideal for designers requiring a dependable P-Channel MOSFET in power electronics. Explore more semiconductor components on EnvMart to find compatible parts and complementary devices.