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DiodesZetex N-Channel MOSFET 900 mA 100 V Enhancement 3-Pin E-Line ZVN4310A
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZVN4310A |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101, AEC-Q104, AEC-Q100, AEC-Q200 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 900mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 850mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET uses an enhancement channel mode for efficient switching.
- The device has a maximum drain-source resistance of 500 milliohms ensuring low conduction losses.
- Maximum power dissipation is rated at 850 milliwatts for reliable thermal performance.
- Operating temperature range spans from -55°C to 150°C for wide environmental compatibility.
- Gate-source voltage limits are ±20 V, protecting the MOSFET during switching operations.
- Physical dimensions measure 4.77 mm length, 4.01 mm height, and 2.41 mm width.
- Designed to automotive standards including AEC-Q101, AEC-Q104, AEC-Q100, and AEC-Q200 for quality assurance.
- Forward voltage is 1.2 V, optimizing control circuits with precision.
Product Description
DiodesZetex ZVN4310A is a high-performance N-Channel MOSFET designed for discrete semiconductor electronic applications. Featuring a 900 mA continuous drain current capacity and a 100 V maximum drain-source voltage, this enhancement mode transistor offers efficient power control in a compact 3-pin E-Line through-hole package.
The MOSFET is engineered for robust operation with a maximum drain-source resistance of 500 milliohms, enabling low power losses and efficient conduction. It supports a maximum power dissipation of 850 milliwatts, ensuring reliable performance under moderate load conditions.
Its operating temperature range from -55°C to 150°C makes it versatile for demanding environments including industrial electronics, automotive circuits, and power management systems. The device complies with key automotive standards such as AEC-Q101 and AEC-Q200, emphasizing its suitability for vehicular electronic applications.
Protection is enhanced by gate-source voltage tolerance ranging between -20 and +20 volts, safeguarding the MOSFET against overvoltage stresses. The design dimensions of 4.77 mm length, 4.01 mm height, and 2.41 mm width facilitate easy PCB layout integration.
Applications include power control modules, switching regulators, and general-purpose amplification circuits in electronics manufacturing, HVAC controls, communication devices, and instrumentation. The DiodesZetex ZVN4310A supports industrial automation, consumer electronics, and automotive sectors requiring dependable semiconductor components.
This MOSFET uses enhancement channel technology for energy-efficient switching. Maximum drain-source resistance minimizes conduction losses. Wide thermal tolerance supports robust industrial applications. Compliant with automotive quality standards for stringent reliability.
Compact through-hole package simplifies assembly and maintenance. Operates within a broad gate-source voltage range for flexible control. Low forward voltage enhances circuit efficiency and response speed. Precision dimensions enable compact, efficient PCB footprint design.
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Frequently Asked Questions
The maximum continuous drain current for the ZVN4310A is 900 mA.
It has a maximum drain-source voltage rating of 100 V.
The physical dimensions of this MOSFET are 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width.
The maximum power dissipation for the ZVN4310A is rated at 850 milliwatts.
This model operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage is rated at ±20 V.
It complies with automotive standards including AEC-Q101, AEC-Q104, AEC-Q100, and AEC-Q200.
This MOSFET is packaged in a 3-pin E-Line through-hole configuration.
The maximum drain-source resistance is 500 milliohms.
It features an N-channel type configuration.
The forward voltage is rated at 1.2 V.
This model utilizes a through-hole mounting type.
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