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onsemi N-Channel MOSFET 70A 60V Enhancement Mode 3-Pin TO-220 RFP70N06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | RFP70N06 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 14mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
| ER - Transistor, MOSFET, N ChBrand | Intersil |
Key Features
- Designed with enhancement mode for reliable switching performance.
- Maximum continuous drain current rated at 70 amps.
- Drain-source voltage rated up to 60 volts for medium power applications.
- TO-220 package with 3 pins supports through-hole mounting.
- Low maximum drain-source resistance of 14 milliohms ensures efficient conduction.
- High maximum power dissipation of 150 watts for robust operation.
- Wide operating temperature range from -55°C up to 175°C.
- Typical gate charge of 120 nanocoulombs allows fast switching.
Product Description
onsemi RFP70N06 is an N-Channel Enhancement Mode MOSFET designed for efficient power switching applications with a maximum continuous drain current of 70 amperes and a drain-source voltage rating of 60 volts. Packaged in a 3-pin TO-220 form factor suitable for through-hole mounting, this device supports rugged industrial and commercial applications.
This MOSFET features a low drain-source resistance of 14 milliohms which aids in minimizing conduction losses and improving overall efficiency. The enhancement mode operation ensures reliable and fast switching performance in industrial power control circuits.
With a maximum power dissipation of 150 watts and an operating temperature range from -55°C to 175°C, the RFP70N06 is suitable for demanding environments including industrial equipment, power supplies, HVAC systems, and motor control.
The device exhibits a typical gate charge of 120 nanocoulombs, promoting quick transitions and reduced switching losses. The gate-source voltage rating of -20V to +20V offers robust protection against voltage spikes.
Forward voltage of 1.1 volts further enhances efficiency by reducing power losses during conduction. The compact TO-220 package with height of 9.4 mm, width of 4.83 mm, and length of 10.67 mm facilitates easy integration into power designs.
onsemi is a recognized brand specializing in discrete semiconductors offering reliable MOSFETs optimized for industrial, laboratory, and commercial electronic applications requiring high current switching.
Designed with enhancement mode for reliable switching performance. Maximum continuous drain current rated at 70 amps. Drain-source voltage rated up to 60 volts for medium power applications. TO-220 package with 3 pins supports through-hole mounting.
Low maximum drain-source resistance of 14 milliohms ensures efficient conduction. High maximum power dissipation of 150 watts for robust operation. Wide operating temperature range from -55°C up to 175°C. Typical gate charge of 120 nanocoulombs allows fast switching.
Gate-source voltage tolerance of -20 to +20 volts maintains device stability. Forward voltage drop of 1.1 volts minimizes conduction losses. Explore more MOSFETs and semiconductor components on EnvMart for your industrial and electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 70 amperes.
The drain-source voltage is rated up to 60 volts, suitable for medium power applications.
It comes in a TO-220 package type and supports through-hole mounting with 3 pins.
The maximum power dissipation for this unit is 150 watts, allowing for robust operation.
This model operates within a wide temperature range from -55°C to 175°C.
The typical gate charge is 120 nanocoulombs, which allows for fast switching.
The maximum drain-source resistance is 14 milliohms, which helps in efficient conduction.
The gate-source voltage rating is from -20V to +20V, providing robust protection against voltage spikes.
The forward voltage drop is 1.1 volts, which minimizes conduction losses during operation.
The dimensions are 9.4 mm in height, 4.83 mm in width, and 10.67 mm in length.
This MOSFET is suitable for industrial equipment, power supplies, HVAC systems, and motor control applications.
It features an N-channel type with enhancement mode for reliable switching performance.
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