DiodesZetex Single 1 N-Channel MOSFET, 360 mA, 50 V Enhancement Mode, 6-Pin SC-88 Package DMN53D0LDW-7

DiodesZetex DMN53D0LDW-7 is a single 1 N-Channel MOSFET transistor optimized for low to medium power switching and amplification in electronic circuits. Rated for a maximum continuous drain current of 360 mA and a maximum drain-source voltage of 50 V, it operates in enhancement mode providing normally off behavior which is suitable for power control in a variety of applications.

The device comes in a compact 6-pin SC-88 surface mount package measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height, making it ideal for applications where PCB real estate is limited. It features a low maximum drain-source resistance (Rds) of 4.5 Ω, contributing to reduced power loss and heat generation during operation.

This MOSFET is designed for rugged environments with an operating temperature range from -55°C to +150°C. It is also compliant with automotive and industrial quality standards including AEC-Q200, AEC-Q101, AEC-Q100, J-STD-020, UL 94V-0, MIL-STD-202, and RoHS, ensuring reliability and safety in demanding electronic and automotive systems.

With a typical gate charge of 0.6 nC at gate-source voltage, switching performance is optimized to reduce power consumption and switching delays. This single transistor configuration device is often used in discrete semiconductor applications including power management modules, signal amplification, and switching circuits found in industrial, automotive, manufacturing, and consumer electronics sectors.

Engineers working on PCB and module design will benefit from the availability of detailed datasheets, 3D models, schematics, and footprints readily accessible for integration using popular software tools. The device supports surface mount technology for efficient manufacturing and assembly.

Set yourself up for precise, low-power electronic control solutions with the DiodesZetex DMN53D0LDW-7 N-Channel MOSFET, a trusted component in discrete semiconductor portfolios. Operates with a maximum continuous drain current of 360 mA.

Maximum drain-source voltage rating of 50 V. Features a surface-mount 6-pin SC-88 package for compact PCB layouts. Enhancement mode channel type ensuring normally off transistor operation. Low maximum drain-source resistance of 4.5 Ω for efficient switching.

Capable of operating over a wide temperature range from -55°C to +150°C. Complies with automotive standards AEC-Q200, AEC-Q101, and AEC-Q100 for reliability. Certified to standards including J-STD-020, UL 94V-0, MIL-STD-202, and RoHS compliant.

Typical gate charge of 0.6 nC at rated gate-source voltage. Designed for single-transistor configuration in discrete semiconductor applications. Explore related semiconductor and MOSFET components on EnvMart for all your electronics manufacturing and development needs.