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Vishay P-Channel MOSFET, 6.8 A, 100 V Enhancement Mode, 3-Pin TO-220 Package IRF9520PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF9520PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.8A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -6.3V |
Key Features
- Maximum continuous drain current of 6.8 amperes ensures robust current handling capabilities.
- Rated for maximum drain-source voltage of 100 volts suitable for medium power applications.
- Compact TO-220 package with 3 pins allows easy PCB integration and thermal management.
- Enhancement mode channel optimizes switching performance for power management circuits.
- Maximum power dissipation of 60 watts enables efficient heat handling in demanding environments.
- Typical gate charge of 18 nanocoulombs supports fast switching speeds.
- Operating temperature range from -55°C to 175°C accommodates harsh industrial conditions.
- Maximum drain-source resistance of 600 milliohms reduces conduction losses.
Product Description
Vishay IRF9520PBF is a P-Channel Enhancement Mode MOSFET with a maximum continuous drain current of 6.8 A and a maximum drain-source voltage of 100 V. Packaged in a 3-pin TO-220 through-hole configuration, it facilitates reliable and efficient switching in various electronic circuits.
This MOSFET features a maximum power dissipation rating of 60 W, supporting effective thermal management for industrial and commercial applications. Its typical gate charge of 18 nC allows for rapid switching operations, reducing switching losses.
With a maximum drain-source resistance (Rds) of 600 milliohms, the IRF9520PBF minimizes conduction losses and enhances circuit efficiency. It supports operation across an extensive temperature range from -55°C to +175°C, ensuring durability under harsh environmental conditions.
The device supports a maximum gate-source voltage of -20 to +20 volts and exhibits a forward voltage of -6.3 V. Its compact dimensions (Length 10.41 mm, Width 4.7 mm, Height 9.01 mm) make it suitable for space-constrained designs.
This P-Channel MOSFET is ideally suited for power management in industrial electronics, power supplies, motor control circuits, and other semiconductor applications. It is compliant with Vishay standards and originates from China.
Maximum continuous drain current: 6.8 A. Maximum drain-source voltage: 100 V. TO-220 package with 3-pin through-hole mount. Maximum power dissipation: 60 W. Operating temperature range: -55°C to 175°C. Typical gate charge: 18 nC for fast switching.
Maximum drain-source resistance: 600 mΩ. Compact dimensions for easy PCB layout. Forward voltage of -6.3 V. Gate-source voltage range: -20 to +20 V.
Explore the Electronics & Electricals category at EnvMart for a wide selection of semiconductor components including MOSFETs for various industrial, commercial, and laboratory uses.
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Frequently Asked Questions
The maximum continuous drain current of this model is 6.8 A.
It is rated for a maximum drain-source voltage of 100 V.
This MOSFET has a maximum power dissipation rating of 60 W.
The operating temperature range for this unit is from -55°C to 175°C.
The dimensions of the TO-220 package are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
The typical gate charge is 18 nanocoulombs (nC).
The maximum drain-source resistance is 600 milliohms (mΩ).
This model features a P-Channel Enhancement Mode channel type.
The maximum gate-source voltage is rated at -20 to +20 volts.
The forward voltage of this MOSFET is -6.3 V.
The TO-220 package has 3 pins.
This model is suitable for power management in industrial electronics, power supplies, and motor control circuits.
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