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Infineon HEXFET N-Channel MOSFET 195 A 150 V Enhancement 3-Pin TO-263 IRFS4115TRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS4115TRLPBF |
| Width | 11.3mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 195A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 12.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 77nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The device features a low on-resistance of 12.1 milliohms for efficient power conduction.
- It supports a maximum power dissipation of 375W ensuring robust thermal handling.
- Designed with an enhancement channel mode to optimize switching performance.
- The MOSFET operates between -55°C and 175°C for wide temperature applications.
- Typical gate charge is 77nC at 7V gate-source voltage, enabling fast switching.
- Maximum gate-source voltage is ±20 V for reliable gate control.
- Forward voltage drop is 1.3 V ensuring low conduction loss.
- Complies with automotive standard AEC-Q101 for enhanced reliability.
Product Description
Infineon IRFS4115TRLPBF HEXFET N-Channel MOSFET is a high-performance power transistor rated for 150 volts drain-source voltage and 195 amperes continuous drain current. Packaged in a 3-pin TO-263 surface-mount module, it provides optimal balance of power density and thermal management suitable for industrial and automotive electronics applications.
The device features a low on-resistance of 12.1 milliohms, minimizing conduction losses and improving efficiency in power switching circuits. It supports maximum power dissipation up to 375 watts and operates reliably in temperature ranges from -55°C to 175°C, meeting demanding environmental conditions.
This N-channel enhancement mode MOSFET is designed for rapid switching with typical gate charge of 77 nanocoulombs at gate voltage of 7 volts and withstands gate-source voltage up to ±20 volts. The forward voltage drop of 1.3 volts ensures low energy loss during operation.
Compliant with the automotive standard AEC-Q101, the IRFS4115TRLPBF offers enhanced durability and performance required in automotive electronics and industrial systems. Its compact form factor with dimensions 10.67mm by 11.3mm by 4.83mm provides versatility in PCB layouts.
The device is ideal for use in power supplies, motor control, DC-DC converters, and switching regulators within industrial, automotive, and commercial environments. It supports surface mount technology allowing easy integration into modern electronic assemblies for enhanced production efficiency.
Robust thermal properties make it suitable for high power and high temperature operation scenarios often found in manufacturing and automotive sectors.
The IRFS4115TRLPBF extends the INFINEON HEXFET series reputation for reliable, high performance power MOSFETs designed to optimize power density, switching speed, and thermal efficiency in modern power electronic applications.
Browse more industrial semiconductor components and power transistors at EnvMart to find the right device matching your technical requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 195 A.
This MOSFET has a maximum drain-source voltage rating of 150 V.
It features a low on-resistance of 12.1 milliohms, which helps minimize conduction losses.
The maximum power dissipation supported by this MOSFET is 375 W.
The typical gate charge at a gate-source voltage of 7 V is 77 nC.
The dimensions of the TO-263 package are 10.67 mm in length, 11.3 mm in width, and 4.83 mm in height.
It operates reliably within a temperature range of -55°C to 175°C.
The maximum gate-source voltage for this MOSFET is ±20 V.
This MOSFET complies with the automotive standard AEC-Q101, ensuring enhanced reliability.
It is suitable for applications in power supplies, motor control, DC-DC converters, and switching regulators.
This model uses an N-channel enhancement mode for optimized switching performance.
The forward voltage drop for this MOSFET is 1.3 V, which contributes to low energy loss during operation.
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