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Infineon OptiMOS 3 N-Channel MOSFET 15.2 A 200 V Enhancement 8-Pin TDSON BSC900N20NS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC900N20NS3GATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15.2A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62.5W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- OptiMOS 3 series delivers efficient power management with enhanced performance.
- Surface mount type for compact PCB design.
- Maximum power dissipation of 62.5 W supports high power applications.
- Low maximum drain source resistance of 90 mΩ reduces conduction losses.
- Operates reliably within temperature range from -55°C to 150°C.
- Typical gate charge of 9 nC ensures fast switching capability.
- Enhanced channel mode N-Channel MOSFET for improved control.
- Maximum gate-source voltage of ±20 V protects device integrity.
Product Description
Infineon BSC900N20NS3GATMA1 OptiMOS 3 N-Channel MOSFET is designed for high-efficiency power management in electronic circuits. With a maximum drain current of 15.2 A and 200 V drain-source voltage rating, this 8-pin TDSON package device supports demanding industrial and electronic applications requiring reliable, surface-mounted semiconductor components.
The OptiMOS 3 series offers a combination of low resistance and fast switching with a typical gate charge of just 9 nC. Its enhancement mode channel and maximum power dissipation of 62.5 W enable robust performance under varied thermal conditions from -55°C up to 150°C operating temperatures.
Compact physical dimensions (1.1 mm height, 6.1 mm length, 5.35 mm width) allow efficient PCB layout in power electronics, automotive electronics, and industrial systems. This MOSFET’s forward voltage of 1.2 V and 90 mΩ drain source resistance contribute to reduced power losses and increased energy efficiency.
Infineon’s OptiMOS 3 family is widely adopted for power supply regulation, motor drivers, and switching circuits, providing benefits in manufacturing, automotive systems, industrial electronics, and other heavy-duty electrical designs.
Surface mount mounting simplifies automated assembly processes, improving production efficiency. The device is suited for use in laboratory instruments, HVAC controllers, and other commercial industrial equipment.
OptiMOS 3 series enhances power density and efficiency. 8-pin TDSON package supports surface mounting. Maximum continuous drain current of 15.2 A supports demanding loads. Drain-source voltage rating of 200 V allows high voltage operation.
Low drain-source resistance minimizes conduction losses. Wide operating temperature range improves reliability. Fast switching enabled by low gate charge. Compact size allows dense circuit integration. Applications include industrial automation, automotive electronics, and power management.
Designed for use in semiconductor-based electronic devices and systems. Explore additional Infineon semiconductor products and OptiMOS transistor solutions at EnvMart for comprehensive industrial electronics procurement.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15.2 A.
This MOSFET has a maximum drain-source voltage rating of 200 V.
The typical gate charge for this unit is 9 nC, enabling fast switching capability.
The maximum power dissipation for this model is 62.5 W.
The dimensions of this model are 1.1 mm in height, 6.1 mm in length, and 5.35 mm in width.
The maximum gate-source voltage for this MOSFET is ±20 V.
The maximum drain-source resistance is 90 mΩ, which helps reduce conduction losses.
This model operates reliably within a temperature range from -55°C to 150°C.
It uses surface mount technology, which simplifies automated assembly processes.
This MOSFET is suited for applications in power supply regulation, motor drivers, and switching circuits.
The forward voltage for this model is 1.2 V.
This model features an N-channel type, which enhances control in power management applications.
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