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Vishay EF Series N-Channel MOSFET 70 A 600 V Enhancement 3-Pin TO-247 SiHG70N60EF-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | SiHG70N60EF-GE3 |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 38mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 520W |
| Typical Gate Charge Qg @ Vgs | 253nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 70 amperes provides high current capability.
- Drain-source voltage rating of 600 volts ensures reliable high-voltage operation.
- Low drain-source resistance of 38 milliohms minimizes conduction losses.
- Through hole mount with TO-247 package allows easy PCB assembly.
- Ultra-low typical gate charge of 253 nanocoulombs enhances switching efficiency.
- Maximum power dissipation of 520 watts supports high power operation.
- Wide operating temperature range from -55°C to 150°C ensures durability.
- Fast diode with reduced reverse recovery improves switching speed.
Product Description
Vishay SiHG70N60EF-GE3 is an EF Series N-Channel enhancement mode MOSFET designed for efficient power control applications requiring high current and voltage ratings. Featuring a maximum continuous drain current of 70 amperes and a robust 600 volts drain-source voltage rating, this power MOSFET in a TO-247 3-pin through-hole package is suitable for various industrial, laboratory, and commercial power electronics applications.
The device offers low conduction losses with a maximum drain-source resistance of just 38 milliohms, coupled with an ultra-low gate charge of 253 nanocoulombs that significantly reduces switching losses, making it ideal for high frequency switching environments.
Thermal management is effective with a maximum power dissipation rating of 520 watts and operational temperature range from -55°C to 150°C, ensuring reliable performance under strenuous conditions. The integrated fast body diode minimizes reverse recovery time and charge, enhancing overall switching efficiency.
Typical applications include industrial power supplies, motor drive circuits, DC - DC converters, and other power switching and amplification uses in electronics and electrical engineering fields.
Maximum continuous drain current of 70 amperes provides high current capability. Drain-source voltage of 600 volts provides high voltage tolerance. Low drain-source resistance of 38 milliohms reduces conduction losses. TO-247 3-pin through-hole package facilitates easy integration.
Ultra-low typical gate charge improves switching efficiency. Maximum power dissipation of 520 watts supports high power applications. Wide operating temperature range from -55°C to 150°C. Fast recovery diode reduces switching delays.
Enhanced EF series ruggedness for long-term reliability. Low input capacitance for improved device performance.
This power MOSFET is manufactured in China under Vishay's quality standards and is suitable for electronic component inventories in industrial plants, laboratories, manufacturing, and electronics assembly facilities.
Explore more Vishay semiconductor devices and Power MOSFETs at EnvMart for your high-performance electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 70 amperes, providing high current capability for various applications.
This MOSFET has a drain-source voltage rating of 600 volts, ensuring reliable operation in high-voltage applications.
It comes in a TO-247 package type, which is a 3-pin through-hole mount design for easy PCB assembly.
The maximum power dissipation for this MOSFET is 520 watts, supporting high power operation.
The typical gate charge is 253 nanocoulombs, which enhances switching efficiency in high-frequency applications.
It features a low drain-source resistance of 38 milliohms, which minimizes conduction losses during operation.
The operating temperature range is from -55°C to 150°C, ensuring durability under various conditions.
The forward voltage of the integrated fast body diode is 1.2 volts, which helps improve switching speed.
This model is suitable for industrial power supplies, motor drive circuits, and DC-DC converters among other power electronics applications.
The maximum gate-source voltage is -30V to +30V, allowing for a flexible range in control signals.
The dimensions of this model are 20.82 mm in height, 15.87 mm in length, and 5.31 mm in width.
This power MOSFET is manufactured in China under Vishay's quality standards.
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