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Infineon OptiMOS 2 N-Channel MOSFET 2.5 A 20 V Enhancement 3-Pin SOT-23 BSS205NH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.3mm |
| Length | 2.9mm |
| Model | BSS205NH6327XTSA1 |
| Width | 0.1mm |
| Mount Type | Surface |
| Series | OptiMOS 2 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 85mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 2.1nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.1V |
Key Features
- Maximum continuous drain current of 2.5 amperes ensures reliable operation.
- Maximum drain-source voltage rated at 20 volts for robust performance.
- Compact surface-mount SOT-23 package with 3 pins for easy PCB installation.
- Low on-resistance of 85 milliohms enhances power efficiency.
- Capable of handling power dissipation of up to 500 milliwatts.
- Wide operating temperature range from -55°C to 150°C suitable for industrial and automotive uses.
- Typical gate charge of 2.1 nanocoulombs enabling fast switching.
- Qualified to AEC-Q101 automotive standard for enhanced reliability.
Product Description
Infineon BSS205NH6327XTSA1 OptiMOS 2 series N-Channel MOSFET is engineered for high-efficiency switching applications in industrial and automotive sectors. It supports a continuous drain current of 2.5 A and a drain-source voltage of 20 V, housed in a compact 3-pin SOT-23 surface mount package ideal for space-constrained PCB designs.
Its low drain-source resistance of 85 mΩ ensures minimal power loss, enhancing overall system efficiency. The device can dissipate up to 500 mW, functioning reliably within a wide temperature range from -55°C to 150°C, meeting rigorous industrial requirements. It features a typical gate charge of 2.1 nC allowing quick turn-on and turn-off times, critical for high-speed switching operations.
This MOSFET meets the stringent AEC-Q101 standard, guaranteeing suitability for automotive power management, DC-DC converters, motor control circuits, and RF power amplification tasks. It is avalanche rated to sustain voltage spikes and high energy pulses encountered in dynamic environments.
Maximum continuous drain current of 2.5 amperes ensures reliable operation. Maximum drain-source voltage rated at 20 volts for robust performance. Compact surface-mount SOT-23 package with 3 pins for easy PCB installation.
Low on-resistance of 85 milliohms enhances power efficiency. Capable of handling power dissipation of up to 500 milliwatts. Wide operating temperature range from -55°C to 150°C suitable for industrial and automotive uses.
Typical gate charge of 2.1 nanocoulombs enabling fast switching. Qualified to AEC-Q101 automotive standard for enhanced reliability. Used in automotive power management systems and DC-DC converters. Supports motor control and RF power amplification applications.
This product is ideal for industrial automation, automotive electronics, and power management systems requiring efficient and durable semiconductor switching solutions. Find more high-quality semiconductors and MOSFETs in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 2.5 amperes, ensuring reliable operation in various applications.
This MOSFET has a maximum drain-source voltage rated at 20 volts, providing robust performance in power management systems.
The BSS205NH6327XTSA1 is housed in a compact SOT-23 package with 3 pins, making it suitable for surface-mount applications.
It operates within a wide temperature range from -55°C to 150°C, making it suitable for both industrial and automotive uses.
The typical gate charge for this model is 2.1 nanocoulombs, which enables fast switching capabilities.
This model can handle a maximum power dissipation of up to 500 milliwatts, ensuring efficient operation in various applications.
The dimensions of the BSS205NH6327XTSA1 are 2.9 mm in length, 0.1 mm in width, and 1.3 mm in height.
Yes, it is qualified to the AEC-Q101 automotive standard, ensuring enhanced reliability for automotive power management systems.
The on-resistance is rated at 85 milliohms, which enhances power efficiency during operation.
This model is suitable for automotive power management, DC-DC converters, motor control circuits, and RF power amplification tasks.
The maximum gate-source voltage for the BSS205NH6327XTSA1 is -12 to +12 volts, allowing for flexible control in various circuits.
This model utilizes an N-channel configuration, which is common for enhancement mode MOSFETs in switching applications.
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