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Infineon HEXFET Type P-Channel MOSFET 6.6A 100V Enhancement Mode 3-Pin TO-252 IRFR9120NTRPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR9120NTRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.6A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 480mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- Supports high continuous drain current of 6.6A for efficient operation.
- Designed for operation up to 100V maximum drain-source voltage.
- Utilizes enhancement mode for improved switching performance.
- Compact 3-pin TO-252 DPAK surface mount package.
- Low maximum drain-source resistance of 480mΩ to reduce power losses.
- Operates reliably within temperature range of -55°C to 150°C.
- Typical gate charge is 27nC at Vgs, enabling fast switching.
- Suitable for power management in automation and industrial equipment.
Product Description
Infineon IRFR9120NTRPBF HEXFET Type P-Channel MOSFET delivers a maximum continuous drain current of 6.6A and supports voltages up to 100V, packaged in a TO-252 (DPAK) surface mount form factor. This enhancement mode device features a low Rds(on) of 480mΩ, contributing to efficient power dissipation at 40W max, making it well-suited to modern electronic applications requiring reliable current management and low conduction losses.
The MOSFET operates optimally within a wide temperature range from -55°C up to 150°C, supporting demanding environments in industrial, automation, HVAC, and manufacturing systems. Its fast switching capability is facilitated by a typical gate charge of 27nC, and the device is designed for surface mounting, simplifying integration into PCB layouts.
Applications include power management in automation systems, high-current switching in industrial equipment, DC-DC converters, inverter circuits, and motor control tasks where reliable voltage and current control is critical. The device’s robust operational parameters make it suitable for a broad spectrum of sectors reliant on efficient power electronics.
While it bears no specific automotive certification, its specifications meet general industrial requirements. The country of origin is China. High continuous drain current rating of 6.6A for enhanced performance. Maximum drain-source voltage of 100V suitable for various power applications.
Low drain-source resistance minimizes power loss and thermal buildup. Compact 3-pin TO-252 DPAK package for surface mount technology. Wide operating temperature range from -55°C to 150°C for harsh environments. Enhancement channel mode provides improved switching efficiency.
Typical gate charge of 27nC enables rapid switching speeds. Reliable gate-source voltage range from -20V to +20V. Applications in automation, power supplies, inverters, and motor controls. Manufactured in China ensuring consistency and quality.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.6A, allowing for efficient operation in various applications.
It supports a maximum drain-source voltage of 100V, making it suitable for various power applications.
This model is packaged in a TO-252 (DPAK) surface mount form factor, facilitating easy integration into PCB layouts.
The typical gate charge is 27nC at Vgs, enabling fast switching capabilities for improved performance.
It operates reliably within a temperature range of -55°C to 150°C, suitable for harsh environments.
The maximum drain-source resistance is 480mΩ, which helps reduce power losses during operation.
This MOSFET is suitable for power management in automation systems, high-current switching in industrial equipment, and motor control tasks.
The height is 2.39mm and the width is 6.22mm, which are important dimensions for surface mounting.
The maximum power dissipation is rated at 40W, allowing for effective thermal management in applications.
The reliable gate-source voltage range is from -20V to +20V, accommodating various circuit designs.
It utilizes a P-channel enhancement mode, which improves switching efficiency in applications.
The country of origin for this model is China, ensuring consistent manufacturing standards.
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