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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | ZXMP4A57E6TA |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-26 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.7A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 15.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.95V |
DiodesZetex ZXMP4A57E6TA is a P-Channel MOSFET designed for electronic applications requiring robust switching characteristics, rated for a continuous drain current of 3.7 A and a maximum drain-source voltage of 40 V. This device uses an enhancement mode channel, making it suitable for both industrial and automotive electronic designs.
The MOSFET comes in a surface mount 6-pin SOT-26 package, providing a compact footprint for modern printed circuit boards. It features a maximum drain-source resistance of 150 milliohms, which helps reduce power losses in high-frequency switching applications.
With a maximum power dissipation of 1.7 watts, this MOSFET handles moderate power levels efficiently. The typical gate charge at 15.8 nanocoulombs allows for faster switching speeds, improving overall circuit response. It supports gate-source voltages from -20 V to +20 V, allowing flexibility in driver circuit designs.
The device operates reliably over a wide temperature range from -55°C to 150°C, suitable for harsh environmental conditions including automotive or industrial settings. It meets the stringent AEC-Q101 standard for automotive electronics, highlighting its suitability for automotive circuit applications.
Physical dimensions of 3.1 mm length, 1.7 mm width, and 1.3 mm height enable integration into space-conscious electronic devices. The MOSFET also displays a forward voltage of -0.95 V, facilitating efficient current conduction during operation.
Surface mount 6-pin SOT-26 package ensures compact design. Enhancement mode P-Channel for reliable switching. Maximum drain-source voltage of 40 V supports medium voltage applications. Continuous drain current up to 3.7 A for robust handling.
Maximum power dissipation of 1.7 W maintains thermal stability. Wide operating temperature from -55°C to 150°C ensures durability. Automotive qualified to AEC-Q101 standard. Compact size facilitates integration into tight spaces.
Low drain-source resistance reduces power losses. Fast switching with typical gate charge of 15.8 nC at Vgs.
This DiodesZetex MOSFET is ideal for use in industrial electronics, automotive circuits, power management modules, and embedded systems where space, efficiency, and reliability are critical factors. Explore similar semiconductor components and MOSFETs in the EnvMart catalog for your industrial and commercial needs.
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