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DiodesZetex Darlington Transistor PNP, -500 mA Collector Current, 30 V Collector Emitter Voltage, 3-Pin SOT-23 MMBTA63-7-F

Category Darlington Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 3mm
Model MMBTA63-7-F
Mount Type Surface
Series MMBTA63/64
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic -500mA
Maximum Collector Emitter Voltage Vceo 30V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 10000
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -10V
Maximum Collector Emitter Saturation Voltage VceSAT -30V
Maximum Collector Base Voltage VCBO -30V
Maximum Collector Cut-off Current -100nA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
DiodesZetex MMBTA63-7-F 1 Darlington Transistor PNP, -500 mA 30 V HFE 10000, 3-Pin SOT-23

Key Features

  • PNP transistor polarity designed for switching and amplification applications.
  • High current gain with minimum DC current gain hFE of 10000.
  • Maximum power dissipation of 300 mW supports moderate power circuits.
  • Robust operating temperature range from -55°C to 150°C.
  • Compact 3 mm length and 1 mm height package suitable for space-constrained designs.
  • Meets automotive standard AEC-Q101, ensuring reliability in automotive applications.
  • Includes maximum emitter base voltage of -10 V and collector base voltage of -30 V for stability under varying conditions.
  • Low maximum collector cut-off current of -100 nA minimises leakage in circuits.

Product Description

DiodesZetex MMBTA63-7-F is a PNP Darlington transistor designed for efficient switching and amplification in electronic circuits. It features a maximum continuous collector current of -500 mA, with a maximum collector emitter voltage of 30 V, making it suitable for medium-power applications. The transistor is housed in a compact 3-pin SOT-23 surface mount package, enabling easy integration into printed circuit boards where space is limited.

The device delivers a minimum DC current gain hFE of 10000, providing excellent amplification capabilities. With a maximum power dissipation rating of 300 mW, this transistor supports reliable operation under moderate thermal loads. Operating temperature spans from -55°C to 150°C, suitable for harsh industrial and automotive environments. Notably, the transistor complies with the automotive AEC-Q101 standard, affirming its suitability for automotive electronic systems.

The transistor’s maximum emitter base and collector base voltages of -10 V and -30 V respectively ensure operational stability and protection within circuit designs. Additionally, the extremely low maximum collector cut-off current of -100 nA reduces current leakage, enhancing circuit efficiency and performance.

This device finds applications in industrial control systems, automotive electronics, telecommunications, and other electronic assembly processes requiring compact, high-gain PNP Darlington transistors. The small footprint and surface mounting facilitate automated assembly and high-volume production.

PNP transistor polarity for switching and amplification. High current gain with minimum DC current gain of 10000. Power dissipation rated at 300 mW for reliable operation. Wide operating temperature range from -55°C to 150°C.

Compact SOT-23 3-pin surface mount package. Automotive standard AEC-Q101 certified for vehicle applications. Stable operation with maximum emitter base voltage of -10 V. Low collector cut-off current minimises leakage.

Package contents include the single Darlington Transistor component in the specified configuration. This product supports various electronic and industrial manufacturing requirements. Explore more components and related semiconductor devices in the DiodesZetex range on EnvMart for your project needs.

DiodesZetex Darlington Transistor PNP, -500 mA Collector Current, 30 V Collector Emitter Voltage, 3-Pin SOT-23 MMBTA63-7-F
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Frequently Asked Questions

The maximum continuous collector current for this transistor is -500 mA.

The maximum collector-emitter voltage for the MMBTA63-7-F is 30 V.

This model has a minimum DC current gain (hFE) of 10000, providing excellent amplification capabilities.

The maximum power dissipation for this transistor is rated at 300 mW.

The operating temperature range for the MMBTA63-7-F spans from -55°C to 150°C.

This transistor has a length of 3 mm and a height of 1 mm, housed in a compact SOT-23 package.

The maximum emitter-base voltage for the MMBTA63-7-F is -10 V.

This transistor complies with the automotive standard AEC-Q101, ensuring reliability in automotive applications.

The maximum collector cut-off current for the MMBTA63-7-F is -100 nA, which minimizes leakage in circuits.

This model supports surface mounting, making it suitable for integration into printed circuit boards.

The MMBTA63-7-F has a pin count of 3.

This PNP Darlington transistor is suitable for applications in industrial control systems, automotive electronics, and telecommunications.

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