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DiodesZetex P-Channel MOSFET 40 V 11 A Surface Mount TO-252 Package DMP4015SK3-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 2.39mm
Length 6.7mm
Model DMP4015SK3-13
Width 6.2mm
Mount Type Surface
Series DMP4015SK3
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 11A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 15mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.5W
Typical Gate Charge Qg @ Vgs 47.5nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf -0.7V

Key Features

  • Type P channel configuration for switching and amplification.
  • Maximum continuous drain current of 11 amperes for high current applications.
  • Drain-source voltage rating of 40 volts for moderate voltage operations.
  • Surface mount package with 3-pin TO-252 form factor.
  • Enhancement mode channel type ensuring normally-off operation.
  • Low drain-source resistance of 15 milliohms for efficient conduction.
  • Maximum power dissipation of 3.5 watts for reliable thermal performance.
  • Wide operating temperature range from -55°C to 150°C for harsh environments.

Product Description

DiodesZetex DMP4015SK3-13 is a P-Channel MOSFET designed for surface mount applications requiring reliable switching and power handling. It offers a maximum continuous drain current of 11 A and a drain-source voltage of 40 V, packaged in a compact TO-252 3-pin configuration suitable for integration into modern electronic designs.

This enhancement mode MOSFET features a low drain-source resistance of 15 milliohms, ensuring minimal conduction losses and efficient power management. The device supports a maximum power dissipation of 3.5 watts and operates across a wide temperature range from -55°C up to 150°C, making it suitable for industrial, automotive, and commercial electronic systems.

The typical gate charge of 47.5 nC at defined gate voltages enables fast switching characteristics, while the gate-source voltage rating of -25 V to +25 V provides robustness against voltage spikes. The forward voltage is approximately -0.7 V, contributing to effective switching performance.

Measuring 6.7 mm in length, 6.2 mm in width, and 2.39 mm in height, this MOSFET fits compact PCB layouts and assemblies. Certified to automotive standard AEC-Q101, it meets stringent quality control and reliability standards demanded by the automotive sector.

Type P channel configuration for switching and amplification. Maximum continuous drain current of 11 amperes for high current applications. Drain-source voltage rating of 40 volts for moderate voltage operations. Surface mount package with 3-pin TO-252 form factor.

Enhancement mode channel type ensuring normally-off operation. Low drain-source resistance of 15 milliohms for efficient conduction. Maximum power dissipation of 3.5 watts for reliable thermal performance. Wide operating temperature range from -55°C to 150°C for harsh environments.

Typical gate charge of 47.5 nanocoulombs at standard gate-source voltage. Compliant with automotive standard AEC-Q101 for automotive-grade quality.

This MOSFET is ideal for industrial control, automotive electronics, power management, and general-purpose switching applications. With its robust thermal performance and automotive qualification, it guarantees dependable function in demanding environments.

Explore additional semiconductor components and power MOSFET options at EnvMart to complement your electronic designs and project needs.

DiodesZetex P-Channel MOSFET 40 V 11 A Surface Mount TO-252 Package DMP4015SK3-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 11 amperes.

This MOSFET has a drain-source voltage rating of 40 volts.

It is packaged in a surface mount TO-252 form factor with 3 pins.

The operating temperature range is from -55°C to 150°C.

The typical gate charge at defined gate-source voltages is 47.5 nanocoulombs.

The maximum power dissipation for this MOSFET is 3.5 watts.

It features a low drain-source resistance of 15 milliohms.

This MOSFET is compliant with the automotive standard AEC-Q101.

The forward voltage is approximately -0.7 volts.

The maximum gate-source voltage rating is -25 V to +25 V.

The dimensions are 6.7 mm in length, 6.2 mm in width, and 2.39 mm in height.

It has a P channel configuration for switching and amplification.

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