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Vishay 100 V 40 A Surface Mount Schottky Diode TO-263 3-Pin VB40100C-E3/8W
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 10.45mm |
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.45mm |
| Model | VB40100C-E3/8W |
| Width | 9.14mm |
| Mount Type | Surface |
| Series | VB40X |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 40A |
| Peak Reverse Repetitive Voltage Vrrm | 100V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 45mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 250A |
| Maximum Forward Voltage Vf | 730mV |
Key Features
- Features patented Trench MOS Barrier Schottky technology for improved switching speed.
- Maximum continuous forward current rating of 40 A ensures high power handling.
- Peak reverse repetitive voltage of 100 V suitable for various power applications.
- Operates reliably from -40°C to a maximum of 150°C operating temperature.
- TO-263 package type with surface mount design and 3 pins for easy PCB integration.
- Low forward voltage drop of 730 mV reduces power loss and heat generation.
- Peak non-repetitive forward surge current of 250 A withstands transient surges.
- Compact size with dimensions approximately 10.45 mm length and 9.14 mm width.
Product Description
Vishay VB40100C-E3/8W is a high-performance Schottky rectifier diode offered in a TO-263 3-pin package designed for surface mounting. It operates at a maximum continuous forward current of 40 A and a peak reverse repetitive voltage of 100 V, making it suitable for a variety of industrial and commercial electronics applications.
This diode features Vishay's patented Trench MOS Barrier Schottky (TMBS) technology, which minimizes stored charges in the drift region and improves switching speed and efficiency compared to planar Schottky rectifiers. The low forward voltage drop of 730 mV contributes to enhanced overall efficiency and reduced heat dissipation during operation.
The device can reliably operate at temperatures ranging from -40°C up to 150°C, ensuring robustness in demanding environments. It has a peak non-repetitive forward surge current rating of 250 A, allowing it to tolerate transient current spikes during power surges.
The diode is housed in a TO-263 package measuring approximately 10.45 mm in length, 9.14 mm in width, and 4.83 mm in height. Its common cathode configuration and 3-pin layout facilitate integration on printed circuit boards, especially in power supply rectification circuits, switched mode power supplies (SMPS), and DC/DC converters.
Industrial applications for this diode include power management, power supply rectification, and other semiconductor-related uses where efficient and reliable rectification is critical. The device is manufactured in China.
Features patented Trench MOS Barrier Schottky technology. Efficient switching and low forward voltage drop. Robust operation over wide temperature range (-40°C to 150°C). Compact TO-263 surface mount package. Suitable for industrial and commercial power electronics.
Peak forward current: 40 A continuous and 250 A surge. Peak reverse voltage: 100 V. Common cathode configuration with 3 pins.
Vishay's semiconductor range offers reliable components suitable for diverse power electronics applications. Explore similar Schottky diodes and rectifiers to find the best fit for your design and manufacturing needs at EnvMart.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current rating of this diode is 40 A.
It has a peak reverse repetitive voltage of 100 V, suitable for various power applications.
This model operates reliably from -40°C to a maximum of 150°C.
The TO-263 package measures approximately 10.45 mm in length, 9.14 mm in width, and 4.83 mm in height.
It features a common cathode configuration with 3 pins, facilitating easy integration on printed circuit boards.
The forward voltage drop is 730 mV, which helps reduce power loss and heat generation.
The diode can withstand a peak non-repetitive forward surge current of 250 A.
It features Vishay's patented Trench MOS Barrier Schottky (TMBS) technology, which enhances switching efficiency.
It is suitable for power management, power supply rectification, and other semiconductor-related uses.
The peak reverse current is rated at 45 mA.
This diode is manufactured in China.
This model belongs to the VB40X series of Schottky diodes.
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