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Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI4909DY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 34mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.2W |
| Typical Gate Charge Qg @ Vgs | 41.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- The device supports a maximum continuous drain current of 6.5 A.
- It has a maximum drain-source voltage rating of 40 V.
- The MOSFET comes in an 8-pin SOIC package, suitable for surface mounting.
- The maximum drain-source resistance is low at 34 mΩ, ensuring minimal conduction losses.
- Typical gate charge at Vgs is 41.5 nC, enabling fast switching.
- Operating temperatures range from -55°C to +150°C for reliable performance in harsh environments.
- The transistor configuration is isolated, supporting effective circuit designs.
- The product is manufactured in China and does not include any automotive standards or approvals.
Product Description
Vishay SI4909DY-T1-GE3 is an isolated TrenchFET 2-type P-Channel Power MOSFET that offers efficient and reliable switching for power management circuits. Rated for a maximum continuous drain current of 6.5 A and a maximum drain-source voltage of 40 V, this MOSFET is optimized for low conduction losses with a drain-source resistance of 34 mΩ. Featuring an 8-pin SOIC surface mount package, it fits high-density circuit layouts effectively.
This device provides excellent performance with an enhancement-mode channel and typical gate charge of only 41.5 nC at Vgs. It is designed to operate across a wide temperature range from -55°C to +150°C, making it suitable for industrial, consumer electronics, and automotive environments, although it does not conform to automotive standard approvals.
The compact form factor with dimensions 1.55 mm height, 4 mm width, and 5 mm length supports flexible PCB designs. Its dual P-Channel elements per chip configuration enhances electrical performance in switching and amplification roles.
Manufactured in China, this MOSFET is ideal for applications including power supplies, motor control, DC-DC converters, and other electronic circuits demanding efficient power switching and thermal reliability.
The device supports a maximum continuous drain current of 6.5 A. Maximum drain-source voltage is rated at 40 V for versatile low-voltage applications. Low drain-source resistance minimizes power loss during conduction. Robust operating temperature range from -55°C to +150°C.
Eight-pin SOIC surface mount package for compact board integration. Typical gate charge of 41.5 nC enables fast switching and efficient control. Isolated transistor configuration for simplified circuit design. Compact physical dimensions of 1.55 x 4 x 5 mm.
Manufactured under Vishay Semiconductor quality standards. Explore the Vishay product range on EnvMart for comprehensive semiconductor solutions optimized for industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 6.5 A.
It has a maximum drain-source voltage rating of 40 V.
The typical gate charge at Vgs is 41.5 nC, which enables fast switching.
This model has dimensions of 1.55 mm in height, 4 mm in width, and 5 mm in length.
The maximum drain-source resistance is 34 mΩ, ensuring minimal conduction losses.
It operates within a temperature range of -55°C to +150°C.
This model comes in an 8-pin SOIC package suitable for surface mounting.
It features 2 elements per chip, enhancing electrical performance.
The channel type is P-Channel, designed for enhancement mode operation.
The maximum power dissipation is rated at 3.2 W.
The maximum gate-source voltage is -20 V to +20 V.
It is suitable for applications including power supplies, motor control, and DC-DC converters.
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