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Vishay Silicon Junction Switching Diode Single 200 mA 50 V MicroMELF MCL4151-TR

Category Semiconductors Brand Vishay Condition New

Specifications

Country of Origin China
Diameter 1.2mm
Brand Vishay
Height 1.2mm
Length 2mm
Model MCL4151-TR
Width 1.2mm
Mount Type Surface
Series MCL4151
Maximum Operating Temperature 175°C
Case DO-204AL, molded epoxy over glass body
Package Type MicroMELF
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 50V

Key Features

  • Glass passivated junction ensures enhanced reliability and performance.
  • Cavity-free construction reduces internal defects for greater efficiency.
  • Fast switching capability with 4 ns peak reverse recovery time.
  • Low leakage current typically below 0.2 μA for minimal power loss.
  • High surge current tolerance up to 2 A for peak loads.
  • Matte tin plated leads are solderable and compliant with J-STD-002.
  • Wide operating temperature range from −65°C to 175°C suitable for diverse applications.
  • Color band marking indicates cathode for correct polarity orientation.

Product Description

Vishay MCL4151-TR is a high-reliability silicon junction switching diode designed for surface-mount applications in electronic circuits requiring fast switching and low losses. It supports a maximum forward current of 200 mA and a peak reverse voltage of 50 V, packed in a MicroMELF package with dimensions 2 mm length and 1.2 mm width and height.

The device features a glass passivated junction with a cavity-free structure that ensures excellent electrical performance and durability. Its fast switching speed is characterized by a peak reverse recovery time of only 4 nanoseconds, making it ideal for switching power supplies and signal processing circuits.

This diode exhibits a low typical leakage current of less than 0.2 microamperes, reducing energy consumption and thermal dissipation. The high forward surge current rating of 2 A provides robustness against transient load spikes. The terminals are matte tin plated and comply with solderability standards J-STD-002 and JESD 22-B102 for reliable assembly.

Operating reliably across a wide temperature range from −65°C to 175°C, the MCL4151-TR supports applications in harsh environments including industrial electronics and consumer devices. It is commonly used for high voltage rectification in G2 grid CRT and TV circuits and as a snubber diode in camera flash units.

The MicroMELF packaging ensures a compact footprint with epoxy molding compound meeting UL 94 V-0 flammability rating. The color band on the diode denotes the cathode end for correct polarity installation.

Glass passivated junction ensures enhanced reliability and performance. Cavity-free construction reduces internal defects for greater efficiency. Fast switching capability with 4 ns peak reverse recovery time. Low leakage current typically below 0.2 μA for minimal power loss.

High surge current tolerance up to 2 A for peak loads. Compact MicroMELF package dimensions: 2 mm length, 1.2 mm width and height. Matte tin plated leads are solderable and compliant with J-STD-002. Wide operating temperature range from −65°C to 175°C suitable for diverse applications.

Color band marking indicates cathode for correct polarity orientation.

This Vishay MCL4151-TR diode is suitable for industrial, consumer electronics, and telecommunications equipment requiring durable high-speed switching components. Explore additional semiconductor products from Vishay on EnvMart for diverse electronic application needs.

Explore more products in our Semiconductors category.

Vishay Silicon Junction Switching Diode Single 200 mA 50 V MicroMELF MCL4151-TR
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Frequently Asked Questions

The maximum forward current of this diode is 200 mA.

It has a peak reverse voltage rating of 50 V.

The peak reverse recovery time is 4 nanoseconds.

The MicroMELF package dimensions are 2 mm in length and 1.2 mm in both width and height.

It operates reliably across a temperature range from -65°C to 175°C.

This model supports surface mounting.

The maximum power dissipation is 500 mW.

It has a high surge current tolerance of up to 2 A for peak loads.

The typical leakage current is below 0.2 μA.

The color band marking on the diode indicates the cathode end for correct polarity orientation.

The terminals are matte tin plated and compliant with J-STD-002.

It is commonly used for high voltage rectification in G2 grid CRT and TV circuits, as well as a snubber diode in camera flash units.

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