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onsemi PowerTrench Type P-Channel MOSFET, 3.6 A, 30 V, Enhancement Mode, 6-Pin SOT-23 FDC654P

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 3mm
Model FDC654P
Width 1.7mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 3.6A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 125mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 6.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • This surface-mount device is housed in a compact 6-pin SOT-23 package enabling space-saving PCB designs.
  • Enhancement mode MOSFET technology offers low gate charge of 6.2 nC for fast switching.
  • Maximum power dissipation is 1.6 W, supporting high-efficiency applications.
  • Operates reliably from -55°C to 150°C, suitable for a wide temperature range.
  • The device features a low maximum drain-source resistance of 125 mΩ for improved conduction.
  • Typical forward voltage is rated at -1.2 V facilitating efficient body diode operation.
  • Provides robust gate voltage tolerance of -20 V to +20 V ensuring versatile circuit use.
  • Small form factor with dimensions approximately 3 mm length, 1.7 mm width, and 1 mm height.

Product Description

The onsemi FDC654P PowerTrench Type P-Channel MOSFET is a high-performance discrete semiconductor designed to optimize power efficiency in electronic circuits. Featuring a 6-pin SOT-23 surface-mount package, this MOSFET supports a continuous drain current of 3.6 A with a maximum drain-source voltage rating of 30 V.

Its enhancement mode channel technology provides a low gate charge (6.2 nC) that facilitates fast switching, making it suitable for synchronous rectification and power management applications. The device maintains reliable operation over a broad temperature range from -55°C up to 150°C, ensuring performance in industrial and commercial environments.

With a maximum power dissipation of 1.6 W and a low drain-source resistance of 125 milliohms, the FDC654P contributes to efficient power conversion and minimal energy loss. The soft body diode with a typical forward voltage of -1.2 V reduces voltage spikes, improving circuit stability and potentially eliminating the need for additional snubber circuits.

Compact physical dimensions of approximately 3 mm in length, 1.7 mm in width, and 1 mm in height allow high-density PCB layouts. The device's gate-source voltage range of -20 V to +20 V provides flexibility for various gate drive designs.

Applications include power switching in telecommunications, consumer electronics, computer motherboards, DC-DC converters, and other power-efficient systems requiring compact and reliable P-channel MOSFETs.

This PowerTrench MOSFET series provides enhanced efficiency due to advanced charge balance technology. Soft body diode performance minimizes electromagnetic interference and switching losses. Device complies with RoHS directives and is designed for surface mount technology (SMT).

Explore the Electronics & Electricals > Semiconductor > MOSFET category at EnvMart for more high-quality semiconductor solutions.

onsemi PowerTrench Type P-Channel MOSFET, 3.6 A, 30 V, Enhancement Mode, 6-Pin SOT-23 FDC654P
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.6 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

It is housed in a 6-pin SOT-23 package, suitable for surface mount applications.

The device operates reliably from -55°C to 150°C, making it suitable for various environments.

The maximum power dissipation for this model is 1.6 W.

The typical gate charge is rated at 6.2 nC, which facilitates fast switching.

It features a maximum drain-source resistance of 125 mΩ, which improves conduction efficiency.

The typical forward voltage of the body diode is rated at -1.2 V.

The dimensions of this model are approximately 3 mm in length, 1.7 mm in width, and 1 mm in height.

The gate-source voltage range is from -20 V to +20 V, providing flexibility for various designs.

It is suitable for applications such as power switching in telecommunications, consumer electronics, and DC-DC converters.

This model uses an enhancement mode P-channel type channel technology.

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