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onsemi Transistor 3 A NPN, 25 V, 3-Pin SOT-223, Surface Mount, Maximum Power Dissipation 2W FZT649

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.8mm
Length 6.7mm
Model FZT649
Width 7.3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223 (SC-73)
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 25V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 35V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz

Key Features

  • Maximum DC collector current is 3 A.
  • Maximum collector emitter voltage is 25 V.
  • Package type is compact 3-pin SOT-223 suitable for surface mounting.
  • Maximum power dissipation rating is 2 watts.
  • Designed with NPN transistor polarity and single transistor configuration.
  • Current gain hFE minimum is 70 ensuring amplification performance.
  • Supports operating temperature range from -55°C minimum to 150°C maximum.
  • Maximum transition frequency is 150 MHz suitable for frequency applications.

Product Description

onsemi FZT649 Transistor 3 A NPN 25 V 3-Pin SOT-223 is a compact surface mount transistor designed for electronic and electrical applications requiring reliable small signal transistors. This discrete bipolar junction transistor offers a maximum collector current capacity of 3 A and withstands a collector emitter voltage of up to 25 V.

The transistor comes in a 3-pin SOT-223 (SC-73) package, minimizing PCB space while providing efficient heat dissipation with a maximum power dissipation rating of 2 watts. It features NPN polarity and single transistor configuration, making it suitable for general-purpose switching and amplification circuits.

Operating in temperature ranges from -55°C to 150°C ensures robustness for industrial, laboratory, and commercial electronics usage. The transistor supports a minimum DC current gain (hFE) of 70 and a maximum transition frequency of 150 MHz, making it applicable for signal amplification at moderate frequencies.

The device measures 6.7 mm in length, 7.3 mm in width, and 1.8 mm in height, optimized for surface mounting on PCB layouts in industrial control, power electronics, and communication equipment.

This transistor does not specifically hold automotive standards but serves effectively in various semiconductor discrete component applications. Its single transistor configuration and compact footprint are ideal for small power amplification and switching in electrical circuits.

Maximum DC collector current is 3 A. Maximum collector emitter voltage is 25 V. Surface mount SOT-223 3-pin package. Maximum power rating is 2 watts. NPN transistor polarity with single transistor configuration. Minimum current gain hFE is 70.

Operating temperature range from -55°C to 150°C. Maximum transition frequency 150 MHz. Dimensions: 6.7 x 7.3 x 1.8 mm. No specific automotive standard compliance.

This product is suited for industrial, laboratory, electronics manufacturing, and commercial electronic design applications. For more semiconductor components and Bipolar Transistors, explore the Electronics & Electricals category at EnvMart for comprehensive solutions.

onsemi Transistor 3 A NPN, 25 V, 3-Pin SOT-223, Surface Mount, Maximum Power Dissipation 2W FZT649
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Frequently Asked Questions

The maximum DC collector current for this transistor is 3 A.

The maximum collector-emitter voltage rating for this model is 25 V.

It comes in a compact 3-pin SOT-223 package, suitable for surface mounting.

The maximum power dissipation rating is 2 watts.

The operating temperature range is from -55°C to 150°C.

The minimum DC current gain (hFE) is 70, ensuring effective amplification performance.

The maximum transition frequency is 150 MHz, making it suitable for frequency applications.

This model measures 6.7 mm in length, 7.3 mm in width, and 1.8 mm in height.

It features a single transistor configuration with NPN polarity.

This transistor is suitable for general-purpose switching and amplification circuits in various electronic applications.

The maximum emitter-base voltage (VEBO) is 5 V.

The country of origin for this transistor is India.

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