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Nexperia Resistor-Equipped Transistor 100 mA PNP, 50 V, 3-Pin DFN1412D-3 PDTA143EQCZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTA143EQCZ
Mount Type Surface
Series PDTA143E
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -10V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • Provides 100 mA maximum DC collector current capacity.
  • Features 50 V maximum collector-emitter voltage for reliable operation.
  • Packaged in ultra-small 3-pin DFN1412D-3 surface mount package.
  • Integrates built-in resistors simplifying circuit design and reducing component count.
  • Supports operating temperatures from -55°C to 150°C for diverse applications.
  • Meets automotive standard AEC-Q101 ensuring high reliability for automotive use.
  • Suited for digital switching applications and controlling IC inputs.
  • Low package height of 0.5 mm suitable for automated optical inspection (AOI).

Product Description

The Nexperia PDTA143EQCZ is a resistor-equipped PNP transistor designed for use in compact and surface-mount electronic circuits. It offers a maximum DC collector current of 100 mA and can withstand up to 50 V between collector and emitter. Packaged in an ultra-small 3-pin DFN1412D-3 (SOT8009) leadless surface-mount device, this transistor features side-wettable flanks and a low profile of 0.5 mm, making it ideal for high-density PCB layouts.

Built-in resistors simplify circuit design, reduce component count, and minimize assembly costs. The device supports a wide operating temperature range from -55°C to 150°C, making it suitable for robust applications in automotive and industrial environments. It complies with the AEC-Q101 automotive standard, ensuring high reliability for automotive system integration.

This transistor series is a cost-effective alternative to the BC857 series in digital applications, offering efficient switching of IC inputs and load control. Its low height and structural design support automatic optical inspection (AOI) during manufacturing, improving quality control processes.

100 mA maximum DC collector current. 50 V maximum collector-emitter voltage rating. Integrated resistors reduce external components. Compact 3-pin DFN1412D-3 surface mount package. Wide temperature operation from -55°C to 150°C.

AEC-Q101 automotive qualified for reliability. Ideal for digital switching and load control applications. Low profile suitable for high-density PCB assembly.

This transistor is widely used in industrial, automotive, and consumer digital electronics for signal switching and load driving functions. Its integration of resistors and compact packaging help streamline circuit boards and manufacturing processes. For more high-quality semiconductor solutions, explore the Nexperia range on EnvMart.

Explore more products in our Bipolar Transistors category.

Nexperia Resistor-Equipped Transistor 100 mA PNP, 50 V, 3-Pin DFN1412D-3 PDTA143EQCZ
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Frequently Asked Questions

The maximum DC collector current for the Nexperia PDTA143EQCZ transistor is 100 mA.

This model has a maximum collector-emitter voltage rating of 50 V.

It is packaged in an ultra-small 3-pin DFN1412D-3 surface mount package.

The transistor supports an operating temperature range from -55°C to 150°C.

Yes, it complies with the AEC-Q101 automotive standard, ensuring high reliability for automotive applications.

This model is a PNP transistor, designed for digital switching applications.

The integrated resistors simplify circuit design, reduce component count, and minimize assembly costs.

The PDTA143EQCZ has a pin count of 3.

The minimum operating temperature for this transistor is -55°C.

The maximum emitter-base voltage (VEBO) is -10 V.

It is suited for digital switching applications and controlling IC inputs.

The country of origin for this transistor is India.

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