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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | 2V7002KT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | 2V7002K |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 320mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 420mW |
| Typical Gate Charge Qg @ Vgs | 0.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
onsemi 2V7002KT1G is a high-quality N-Channel MOSFET featuring a maximum continuous drain current of 320 mA and a maximum drain-source voltage of 60 V. Packaged in a compact 3-pin SOT-23 surface mount, it is designed for efficient switching and amplification in various industrial and commercial electronic circuits.
This enhancement mode MOSFET provides excellent low power dissipation up to 420 mW, making it suitable for applications requiring energy-efficient operation. The device operates reliably across a wide temperature range from -55°C to 150°C, supporting use in rugged environmental conditions and automotive electronics.
The 2V7002KT1G includes a Schottky diode integrated internally to optimize switching performance and reduce switching losses. Its low maximum drain source resistance of 2.5 ohms further enhances efficiency in low voltage circuits.
With a typical gate charge of 0.7 nC, it supports rapid switching frequencies, ideal for use in power management, signal switching, and amplification tasks in consumer electronics, industrial controls, and other semiconductor applications.
The MOSFET conforms to the stringent automotive standard AEC-Q101, ensuring high reliability and compliance for automotive-grade applications. Enhancement mode N-Channel MOSFET with integrated Schottky diode. Maximum drain current of 320 mA and voltage rating of 60 V supports varied electronic requirements.
Compact SOT-23 surface mount package with 3 pins for PCB assembly. Low drain source resistance (2.5 ohms) enhances power efficiency. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 0.7 nC facilitates high-speed switching.
Maximum power dissipation of 420 mW minimizes thermal load. Compliant with automotive AEC-Q101 standard for high reliability.
This MOSFET is a reliable component choice for applications in electronics manufacturing, automotive systems, consumer electronics, industrial controls, and power management circuits. It enables designers to achieve efficient power switching with a compact, surface mount device.
Explore our selection of power semiconductors and MOSFETs to find complementary components for your electronic design and assembly projects.
Interested in this product? Drop us an email and we will let you know when it's available for order.
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