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onsemi Transistor 500 mA NPN 300 V DC 3-Pin DPAK MJD340G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.09mm
Length 6.73mm
Model MJD340G
Width 2.38mm
Mount Type Surface
Series MJD340
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V dc
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 3V
Maximum Collector Base Voltage VCBO 300V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 15W
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 10MHz
onsemi MJD340TF NPN Transistor, 500 mA, 300 V, 3-Pin DPAKBrand ON Semiconductor

Key Features

  • This transistor offers a maximum DC collector current of 500 mA.
  • It supports a maximum collector emitter voltage of 300 V DC.
  • The package type is TO-252 designed for surface mount technology.
  • The transistor has a minimum DC current gain (hFE) of 30 for reliable amplification.
  • Maximum power dissipation is rated at 15 W for thermal management efficiency.
  • This device operates within a temperature range from -65°C to 150°C.
  • It features a maximum transition frequency of 10 MHz appropriate for switching circuits.
  • Pin count is 3, facilitating easy integration on PCBs.

Product Description

The onsemi MJD340G is a high-performance NPN bipolar transistor designed for electronic component applications requiring efficient switching and amplification. With a maximum DC collector current of 500 mA and collector emitter voltage up to 300 V DC, this transistor is suitable for medium power circuits and industrial usage.

Packaged in a TO-252 (DPAK) surface mount case with 3 pins, it ensures compact mounting on printed circuit boards. The transistor configuration is single, making it versatile for various signal and power applications.

The device offers a minimum DC gain (hFE) of 30 and a maximum power dissipation of 15 W, balancing electrical performance with thermal safety in demanding environments. Operating temperature spans from -65°C to 150°C, making it suitable for industrial and automotive applications.

This transistor complies with automotive standard AEC-Q101, demonstrating its suitability for rigorous automotive electronic environments. Its maximum transition frequency of 10 MHz supports applications requiring rapid switching response.

Key technical features include a maximum collector base voltage of 300 V DC, emitter base voltage of 3 V, and physical dimensions with length 6.73 mm, width 2.38 mm, and height 0.09 mm. The product is a new unit manufactured in India, branded by onsemi with MPN MJD340G.

Maximum DC collector current: 500 mA. Maximum collector emitter voltage: 300 V DC. Package type: TO-252 surface mount. Minimum DC current gain (hFE): 30. Maximum power dissipation: 15 W. Operating temperature range: -65°C to 150°C.

Maximum transition frequency: 10 MHz. Pin count: 3. Automotive standard AEC-Q101 compliant.

This transistor is suited for industrial, automotive, and manufacturing electronic applications requiring durable and efficient semiconductor switching devices. For more quality bipolar transistors and semiconductor components, browse the Electronics & Electricals > Semiconductor > Bipolar Transistors category at EnvMart.

onsemi Transistor 500 mA NPN 300 V DC 3-Pin DPAK MJD340G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 500 mA.

The maximum collector emitter voltage rating is 300 V DC.

This model uses a TO-252 package type designed for surface mount technology.

The minimum DC current gain (hFE) of the MJD340G is 30.

The maximum power dissipation is rated at 15 W.

The operating temperature range for this model is from -65°C to 150°C.

The maximum transition frequency of the MJD340G is 10 MHz.

This transistor has a pin count of 3, facilitating easy integration on PCBs.

Yes, this transistor complies with the automotive standard AEC-Q101.

The physical dimensions of the MJD340G are 6.73 mm in length, 2.38 mm in width, and 0.09 mm in height.

The MJD340G is an NPN bipolar transistor.

The maximum emitter base voltage (VEBO) for this transistor is 3 V.

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