onsemi PNP Darlington Transistor 2 A 100 V 20 W TO-252 Surface Mount 3-Pin MJD117G

onsemi MJD117G is a PNP Darlington transistor designed to provide robust switching and amplification in electronic circuits. With a maximum continuous collector current of 2 A and a collector-emitter voltage rating of 100 V, this transistor supports medium power applications effectively.

The TO-252 surface mount package and a compact form factor of 6.73 mm length by 2.38 mm height enable easy mounting on printed circuit boards, making it suitable for automated assembly processes. Its minimum DC current gain (hFE) of 1000 ensures efficient signal amplification in multiple electronic domains.

This device operates reliably over a temperature range from -65°C up to 150°C, making it suitable for automotive and industrial environments. Compliance with the AEC-Q101 automotive standard certifies its suitability for automotive electronics requiring stringent quality and reliability.

Key electrical parameters include a maximum emitter base voltage of 5 V, maximum collector base voltage of 100 V, and a maximum collector cut-off current of 20 μA, ensuring low leakage and stable operation. The maximum collector emitter saturation voltage is 2 V with power dissipation capacity of 20 W, supporting efficient power management.

This single-element Darlington transistor is ideal for applications requiring high gain and medium power handling, including power supplies, motor drives, and amplifier circuits in automotive, industrial, and consumer electronics sectors.

High minimum DC current gain of 1000 ensures strong amplification performance. Designed to operate between -65°C and 150°C for durability in harsh environments. Surface mount TO-252 package with 3 pins facilitates easy PCB integration.

Maximum collector cut-off current of 20 μA minimizes leakage currents. Automotive grade compliance to AEC-Q101 standard guarantees reliability. Voltage ratings include 100 V collector-emitter and 5 V emitter-base maximum voltages.

Maximum saturation voltage of 2 V and power dissipation up to 20 W supports efficient switching. Compact package dimensions 6.73 mm length and 2.38 mm height enable space-saving design.

This transistor is a reliable choice within the semiconductor category for electronics and electrical applications and can be found in the Darlington Transistor segment on EnvMart.