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onsemi N-Channel MOSFET, 560 mA, 30 V Enhancement, Surface Mount 3-Pin SOT-23 Package NTR4003NT1G

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onsemi N-Channel MOSFET, 560 mA, 30 V Enhancement, Surface Mount 3-Pin SOT-23 Package NTR4003NT1G

Name: onsemi N-Channel MOSFET, 560 mA, 30 V Enhancement, Surface Mount 3-Pin SOT-23 Package NTR4003NT1G
Brand: onsemi
SKU: 131732
Price: 0.07 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	NTR4003NT1G
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	560mA
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	2Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	690mW
Typical Gate Charge Qg @ Vgs	1.15nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	0.7V

Key Features

The device features an enhancement mode channel for efficient switching.
It comes in a compact 3-pin SOT-23 package suitable for surface mounting.
Maximum power dissipation is 690 mW to support moderate power applications.
The typical gate charge of 1.15 nC ensures fast switching capability.
Operational temperature range extends from -55°C to 150°C for a wide variety of environments.
Maximum drain-source resistance (Rds) is 2 Ω for low conduction losses.
The transistor has a forward voltage drop of 0.7 V.
Meets automotive standard AEC-Q101 ensuring reliability in automotive applications.

Product Description

onsemi NTR4003NT1G is an N-Channel MOSFET transistor designed to handle continuous drain currents up to 560 mA and operate at drain-source voltages up to 30 V. It uses an enhancement mode channel type to provide efficient switching behavior and is packaged in a compact 3-pin SOT-23 surface-mount package.

This MOSFET exhibits low maximum drain-source resistance of 2 Ω, ensuring minimal power loss during conduction. The forward voltage typically measures 0.7 V, suitable for various power control applications. The typical gate charge of 1.15 nC allows for rapid switching, making it ideal for high-frequency circuits.

Rated for maximum power dissipation of 690 mW, it supports medium power electronic designs. The device operates reliably over a temperature range from -55°C to 150°C and complies with automotive grade standard AEC-Q101, indicating robustness for automotive and industrial uses.

Its small footprint with dimensions of 3.04 mm length, 1.4 mm width, and 1.01 mm height allows easy integration in compact printed circuit boards. The 3-pin SOT-23 surface-mount package is well suited for modern manufacturing processes requiring automated placement.

This onsemi MOSFET is widely applicable in industrial electronics, automotive systems, power management circuits, and consumer electronic devices requiring efficient and reliable MOSFET switching elements.

The device features an enhancement mode channel for efficient switching. Compact 3-pin SOT-23 surface mount package for space-saving PCB design. Maximum continuous drain current of 560 mA ensures moderate power handling.

Low maximum drain-source resistance of 2 Ω reduces conduction losses. Operational temperature range of -55°C to 150°C suits diverse environments. Typical gate charge of 1.15 nC enables fast switching performance. Maximum power dissipation rating of 690 mW supports various applications.

Automotive standard AEC-Q101 certified for high reliability. Physical dimensions: 3.04 mm x 1.4 mm x 1.01 mm (LxWxH). Suitable for industrial, automotive, consumer electronics, and power management. Explore EnvMart's category for semiconductors and MOSFETs for a broad range of comparable components from various manufacturers.