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DiodesZetex P-Channel MOSFET 14A, 60V Enhancement Mode, 3-Pin TO-252 Package DMP6180SK3-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 2.39mm
Length 6.7mm
Model DMP6180SK3-13
Width 6.2mm
Mount Type Surface
Series DMP
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 14A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 140mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 40W
Typical Gate Charge Qg @ Vgs 17.1nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1V

Key Features

  • The device uses enhancement mode and is built in a compact 3-pin TO-252 package.
  • It has a low maximum drain-source resistance of 140 milliohms, ensuring minimal power loss.
  • The MOSFET supports maximum power dissipation of up to 40 watts.
  • Typical gate charge at Vgs is 17.1 nanocoulombs, enabling fast switching speeds.
  • It operates reliably across a wide temperature range from -55°C to 150°C.
  • The component complies with automotive standard AEC-Q101 for automotive system robustness.
  • Maximum gate-source voltage rating is ±20 volts, with a forward voltage of approximately -1V.
  • The physical dimensions are 6.7 mm length, 6.2 mm width, and 2.39 mm height for easy PCB integration.

Product Description

DiodesZetex DMP6180SK3-13 is a high-performance P-Channel MOSFET designed to support switching applications in industrial, automotive, and electronic circuit environments. Featuring an enhancement type channel, it delivers a maximum continuous drain current of 14 amperes and can withstand a maximum drain-source voltage of 60 volts, making it highly efficient for power management tasks.

Constructed in a 3-pin TO-252 surface mount package, this MOSFET ensures compact PCB design compatibility and reliable thermal management with a maximum power dissipation rating of 40 watts. The low maximum drain-source resistance of 140 milliohms reduces power loss and heat generation, facilitating improved circuit efficiency.

The device supports a typical gate charge of 17.1 nanocoulombs at the rated gate-source voltage, enabling rapid switching performance necessary in modern power electronics. Its gate-source voltage tolerance up to ±20V along with a forward voltage characteristic near -1V enhances operational stability.

Operating reliably within a temperature range from -55°C to 150°C, it meets the demanding requirements of automotive electronics and industrial control systems, further validated by compliance with AEC-Q101 automotive standards.

Its modest dimensions (6.7 mm length, 6.2 mm width, 2.39 mm height) facilitate easy integration into densely packed electronic assemblies. Applications include power switching in automotive controls, power supplies, DC/DC converters, and other semiconductor-based electronic modules.

The device uses enhancement mode and is built in a compact 3-pin TO-252 package. It has a low maximum drain-source resistance of 140 milliohms, ensuring minimal power loss. The MOSFET supports maximum power dissipation of up to 40 watts.

Typical gate charge at Vgs is 17.1 nanocoulombs, enabling fast switching speeds. It operates reliably across a wide temperature range from -55°C to 150°C. The component complies with automotive standard AEC-Q101 for automotive system robustness.

Maximum gate-source voltage rating is ±20 volts, with a forward voltage of approximately -1V. The physical dimensions are 6.7 mm length, 6.2 mm width, and 2.39 mm height for easy PCB integration.

This product is ideal for applications in electronic circuit design, industrial manufacturing, automotive electronics, and power management systems. Discover more semiconductor components and MOSFET solutions in the Electronics & Electricals category at EnvMart.

DiodesZetex P-Channel MOSFET 14A, 60V Enhancement Mode, 3-Pin TO-252 Package DMP6180SK3-13
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Frequently Asked Questions

The maximum continuous drain current of the DMP6180SK3-13 is 14 amperes.

This model can withstand a maximum drain-source voltage of 60 volts.

The MOSFET supports a maximum power dissipation of up to 40 watts.

The maximum gate-source voltage rating is ±20 volts.

The typical gate charge at Vgs is 17.1 nanocoulombs.

The physical dimensions are 6.7 mm in length, 6.2 mm in width, and 2.39 mm in height.

The maximum drain-source resistance is 140 milliohms.

It operates reliably across a wide temperature range from -55°C to 150°C.

The component complies with the automotive standard AEC-Q101.

This model is constructed in a compact 3-pin TO-252 package.

The DMP6180SK3-13 features a P-channel type.

Yes, it is designed for power management tasks in industrial, automotive, and electronic circuit environments.

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