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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.7mm |
| Model | DMP6180SK3-13 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 17.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1V |
DiodesZetex DMP6180SK3-13 is a high-performance P-Channel MOSFET designed to support switching applications in industrial, automotive, and electronic circuit environments. Featuring an enhancement type channel, it delivers a maximum continuous drain current of 14 amperes and can withstand a maximum drain-source voltage of 60 volts, making it highly efficient for power management tasks.
Constructed in a 3-pin TO-252 surface mount package, this MOSFET ensures compact PCB design compatibility and reliable thermal management with a maximum power dissipation rating of 40 watts. The low maximum drain-source resistance of 140 milliohms reduces power loss and heat generation, facilitating improved circuit efficiency.
The device supports a typical gate charge of 17.1 nanocoulombs at the rated gate-source voltage, enabling rapid switching performance necessary in modern power electronics. Its gate-source voltage tolerance up to ±20V along with a forward voltage characteristic near -1V enhances operational stability.
Operating reliably within a temperature range from -55°C to 150°C, it meets the demanding requirements of automotive electronics and industrial control systems, further validated by compliance with AEC-Q101 automotive standards.
Its modest dimensions (6.7 mm length, 6.2 mm width, 2.39 mm height) facilitate easy integration into densely packed electronic assemblies. Applications include power switching in automotive controls, power supplies, DC/DC converters, and other semiconductor-based electronic modules.
The device uses enhancement mode and is built in a compact 3-pin TO-252 package. It has a low maximum drain-source resistance of 140 milliohms, ensuring minimal power loss. The MOSFET supports maximum power dissipation of up to 40 watts.
Typical gate charge at Vgs is 17.1 nanocoulombs, enabling fast switching speeds. It operates reliably across a wide temperature range from -55°C to 150°C. The component complies with automotive standard AEC-Q101 for automotive system robustness.
Maximum gate-source voltage rating is ±20 volts, with a forward voltage of approximately -1V. The physical dimensions are 6.7 mm length, 6.2 mm width, and 2.39 mm height for easy PCB integration.
This product is ideal for applications in electronic circuit design, industrial manufacturing, automotive electronics, and power management systems. Discover more semiconductor components and MOSFET solutions in the Electronics & Electricals category at EnvMart.
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