DiodesZetex Isolated 2 Type N, Type P-Channel MOSFET, 7.6 A, 30 V Enhancement Mode, 8-Pin SOIC DMC3028LSDX-13

DiodesZetex DMC3028LSDX-13 is a dual isolated MOSFET transistor featuring both Type N and Type P channels configured in enhancement mode. Housed in a compact 8-pin SOIC surface mount package, this device is engineered for high-efficiency power management in electronic circuits.

With a maximum continuous drain current rating of 7.6 amperes and a maximum drain-source voltage of 30 volts, it reliably supports moderate power applications requiring dual-channel operation. The isolated transistor configuration ensures minimal cross-talk between channels, enhancing circuit performance.

The MOSFET boasts a low maximum drain-source resistance of 41 milliohms, reducing conduction losses and improving energy efficiency. Its typical gate charge of 6 nanocoulombs at the gate voltage enables rapid switching capabilities, beneficial for high-frequency applications.

Operating temperature range extends from -55°C to +150°C, ensuring durability and reliability in harsh environments including automotive and industrial contexts. Certified to automotive standard AEC-Q101 and compliant with RoHS, MIL-STD-202, UL 94V-0, and J-STD-020 standards, this MOSFET meets rigorous quality and safety requirements.

Physical dimensions of 1.5 mm height, 4.95 mm length, and 3.95 mm width permit installation on densely populated PCB designs without compromising thermal performance. Forward voltage is rated at 0.7 V with gate-source voltage tolerance between -20 V and +20 V, allowing versatile control in various circuit configurations.

Typically used in industrial electronics, automotive modules, power supplies, and communication equipment, the DiodesZetex DMC3028LSDX-13 enhances power efficiency and circuit integrity. Its dual N/P-channel setup is ideal for complementary switching applications.

Ensure quality integration by using this new condition MOSFET with guaranteed manufacturing standards from China. Maximum continuous drain current of 7.6 A supports robust applications. Low on-resistance of 41 milliohms enhances conduction efficiency.

Wide operating temperature range from -55°C to +150°C suits harsh conditions. Compliant with automotive and industrial standards including AEC-Q101 and RoHS. Compact SOIC 8-pin surface mount package for space-saving design.

Typical gate charge of 6 nC enables fast switching operation. Forward voltage of 0.7 V for precise control. Isolated dual channel transistor configuration supports versatile circuit designs. Manufactured in China with new product quality assurance.

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