Vishay TrenchFET Type P-Channel MOSFET 50 A 20 V Enhancement Mode, 8-Pin SO-8 SIR401DP-T1-GE3

Vishay SIR401DP-T1-GE3 is a high-performance TrenchFET Type P-Channel MOSFET designed for power electronics applications requiring robust current handling and low resistance. With a maximum continuous drain current of 50 A and a drain-source voltage rating of 20 V, this MOSFET supports efficient switching operations in industrial, automotive, and consumer electronics.

This device features enhancement mode channel configuration within a compact 8-pin SO-8 surface mount package, facilitating integration into densely populated circuit boards. Its low maximum drain-source resistance of 7.7 mΩ minimises power dissipation and heat generation, enhancing reliability and efficiency.

Thermally resilient, this MOSFET can operate between -55°C and 150°C, making it suitable for harsh environments. The maximum power dissipation rating of 39 W ensures that the device can handle substantial loads without degradation.

The SIR401DP-T1-GE3 supports gate voltage swings between -12 V and +12 V with a typical gate charge of 205 nC at 20 V, allowing precision control for switching speed and efficiency. The typical forward voltage of -1.1 V improves conduction efficiency, reducing energy loss during on-state operation.

Its physical dimensions (6.25 mm length, 5.26 mm width, and 1.12 mm height) make it compatible with standard SMT manufacturing processes. This MOSFET is ideal for use in power supply circuits, motor controls, and other electronic systems demanding efficient power management.

Features enhancement mode channel operation for efficient switching. Encapsulated in an 8-pin SO-8 surface mount package for compact mounting. Low maximum drain-source resistance of 7.7 mΩ ensures low power loss. Designed for high power dissipation capacity of 39 W suitable for demanding applications.

Operates reliably in temperature ranges from -55°C to 150°C. Maximum gate-source voltage ranges between -12 V and +12 V for flexible control. Typical gate charge is 205 nC at Vgs = 20 V, supporting fast switching. Forward voltage of -1.1 V typical to reduce conduction losses.

Compact dimensions with length 6.25 mm, width 5.26 mm, and height 1.12 mm.

This MOSFET is ideal for industrial, automotive, manufacturing, and power electronics applications requiring robust and efficient semiconductor switching devices. Explore similar Vishay power semiconductors or other MOSFET components in the EnvMart catalog to find the perfect solution for your circuit design.

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