onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6327C

onsemi FDC6327C Isolated PowerTrench 2 Type P, Type N-Channel MOSFET is a surface-mounted semiconductor device designed for switching and amplification in electronic circuits. It features a dual-channel (N and P type) configuration with PowerTrench® technology, optimizing system efficiency and power density.

This MOSFET operates with a maximum continuous drain current of 2.7 A and a drain-source voltage of 20 V, suitable for low-voltage, high-speed switching applications. The device is housed in a compact 6-pin SOT-23 package measuring 3 mm length, 1.7 mm width, and 1 mm height, making it ideal for space-constrained electronic designs.

Key characteristics include a maximum power dissipation of 960 mW, maximum operating temperature of 150°C, and a wide gate-source voltage range of -8 V to +8 V. The enhancement-mode channel provides strong switching capabilities with a typical gate charge of 3.25 nC, contributing to efficient power management in synchronous rectification and DC-DC converter circuits.

The device's isolated transistor configuration with two elements per chip enhances reliability and supports various industrial, laboratory, and consumer electronics applications. The PowerTrench® MOSFET design features a shielded-gate structure that balances charge and improves the figure of merit (FOM), reducing switching losses and system heat generation.

Devices feature PowerTrench® technology for improved system efficiency and power density. Low gate charge and soft reverse recovery body diode allow fast switching performance. Enhancement mode dual N/P-channel MOSFET configuration ensures versatile application.

Maximum power dissipation rating of 960 mW supports robust operation. Wide operating temperature range from -55°C to 150°C suitable for harsh environments. Compact package dimensions: 3 mm length, 1.7 mm width, 1 mm height.

Maximum gate-source voltage range of -8V to +8V ensures reliable switching. Typical gate charge of 3.25 nC at specified gate voltage increases efficiency. Transistor is isolated chip with two elements per chip for enhanced performance.

This MOSFET is well suited for electronic component applications such as power supplies, switching regulators, load switches, and signal processing in industrial, laboratory, and commercial electronics devices.

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