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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 900 V, 5.8 A, 3-Pin TO-247 STW7NK90Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW7NK90Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.8A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 46.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Enhancement mode channel ensures reliable switching performance.
- Maximum continuous drain current is 5.8 amperes.
- Maximum drain-source voltage rating of 900 volts.
- Low drain-source resistance of 2 ohms for efficient operation.
- Typical gate charge of 46.5 nanocoulombs improves switching efficiency.
- Maximum power dissipation of 140 watts allows for high power handling.
- Operates over a wide temperature range from -55°C to 150°C.
- Through-hole mount in a TO-247 package with 3 pins.
Product Description
The STMicroelectronics STW7NK90Z is an N-Channel MDmesh SuperMESH MOSFET featuring a maximum drain-source voltage of 900 V and continuous drain current capability of 5.8 A. Packaged in a 3-pin TO-247 through-hole format, this device is optimized for high-power electronic switching applications and industrial electronics.
This enhancement mode MOSFET provides low on-resistance of 2 ohms and a typical gate charge of 46.5 nC at Vgs, which contributes to efficient switching behavior with minimal energy loss. The device tolerates a gate-source voltage range from -30 V to +30 V, supporting robust control in diverse circuit conditions.
Capable of dissipating up to 140 W of power, the STW7NK90Z is suitable for applications requiring high thermal dissipation. Its operating temperature range extends from -55°C to 150°C, enabling reliable performance under harsh environmental conditions typical in industrial, power management, and electronic manufacturing systems.
The compact physical attributes, with height 20.15 mm, length 15.75 mm, and width 5.15 mm, fit well into embedded systems and power modules. The through-hole TO-247 package facilitates easy mounting and integration into standard printed circuit boards.
The STW7NK90Z MOSFET is typically used in power electronics circuits including motor control, power supplies, inverters, and industrial automation equipment. It supports rigorous operational demands and enhances performance efficiency in multiple industrial sectors.
Enhancement mode channel ensures reliable switching performance. Maximum continuous drain current is 5.8 amperes. Maximum drain-source voltage rating of 900 volts. Low drain-source resistance of 2 ohms for efficient operation.
Typical gate charge of 46.5 nanocoulombs improves switching efficiency. Maximum power dissipation of 140 watts allows for high power handling. Operates over a wide temperature range from -55°C to 150°C. Through-hole mount in a TO-247 package with 3 pins.
Compact dimensions suited for robust industrial and electronic designs. Explore the STMicroelectronics range of semiconductor devices and power MOSFETs at EnvMart for comprehensive solutions tailored to your electronic design needs.
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Frequently Asked Questions
The maximum drain-source voltage rating of this model is 900 volts.
This unit has a maximum continuous drain current capability of 5.8 amperes.
The typical gate charge is 46.5 nanocoulombs at Vgs.
It can dissipate up to 140 watts of power.
The dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
The operating temperature range extends from -55°C to 150°C.
This model uses a through-hole mounting type in a TO-247 package.
This MOSFET has a pin count of 3.
The channel type is N-channel, specifically an enhancement mode channel.
It supports a maximum gate-source voltage range of -30 V to +30 V.
The maximum drain-source resistance is 2 ohms.
This MOSFET is suitable for power electronics circuits including motor control, power supplies, inverters, and industrial automation equipment.
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