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onsemi PowerTrench N-Channel MOSFET 4.5 A 150 V Enhancement 8-Pin SOIC FDS86252

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onsemi PowerTrench N-Channel MOSFET 4.5 A 150 V Enhancement 8-Pin SOIC FDS86252

Name: onsemi PowerTrench N-Channel MOSFET 4.5 A 150 V Enhancement 8-Pin SOIC FDS86252
Brand: onsemi
SKU: 130061

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Category MOSFETs Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.5mm
Length	4mm
Model	FDS86252
Width	5mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	4.5A
Maximum Drain Source Voltage Vds	150V
Maximum Drain Source Resistance Rds	105mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5W
Typical Gate Charge Qg @ Vgs	10.6nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	800mV

Key Features

The device employs an enhancement mode channel for controlled switching.
Maximum continuous drain current rating of 4.5 amperes for reliable operation.
Drain-source voltage withstand up to 150 volts suitable for power applications.
Surface mount SOIC package ensures compact PCB footprint.
Low drain-source resistance of 105 milliohms to minimize conduction losses.
Maximum power dissipation of 5 watts allows moderate thermal handling.
Operating temperature range from -55°C to +150°C supports harsh environments.
Typical gate charge of 10.6 nanoCoulombs enables efficient switching.

Product Description

onsemi FDS86252 PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor device designed for power and switching applications. Featuring a continuous drain current rating of 4.5 A and a maximum drain-source voltage of 150 V, this enhancement mode MOSFET allows efficient control of electrical loads in electronic circuits.

Housed in a compact 8-Pin SOIC (Small Outline Integrated Circuit) package, the device offers a surface mount configuration suitable for modern PCB assembly techniques. The low drain-source resistance (Rds) of 105 milliohms minimizes conduction losses, enhancing overall efficiency.

Capable of dissipating up to 5 watts, the MOSFET is engineered to operate across an extended temperature range from -55°C to +150°C, ensuring reliability in industrial, automotive, and commercial electronics.

The device’s typical gate charge is 10.6 nanoCoulombs, facilitating fast switching speeds, and it supports a maximum gate-source voltage of ±20 volts to protect against voltage spikes.

Its small physical dimensions - 4 mm length, 5 mm width, and 1.5 mm height - make it ideal for space-conscious designs. The MOSFET is especially suited for power management, DC-DC converters, motor control, and amplifier circuits in industrial and commercial electronics.

Designed for surface mount technology, it benefits manufacturing efficiency in mass production. onsemi’s extensive product portfolio ensures compatibility and availability for various application needs.

This PowerTrench MOSFET represents a reliable solution for designers requiring robust and efficient semiconductor switches. Browse the Electronics & Electricals category for related semiconductor and MOSFET products on EnvMart.

Explore more products in our MOSFETs category.