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Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.74mm |
| Length | 6.35mm |
| Model | AUIRF7675M2TR |
| Width | 5.05mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | DirectFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 56mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features a 7-Pin DirectFET surface mount package for optimal thermal management.
- Operates with Enhancement mode channel for efficient switching.
- Maximum power dissipation rating of 45 W for reliable performance.
- Designed to withstand up to 175°C operating temperature.
- Includes automotive standard AEC-Q101 certification for automotive applications.
- Typical gate charge of 21 nC ensures low driving losses.
- Package dimensions of Length 6.35 mm, Width 5.05 mm, and Height 0.74 mm.
- Maximum gate-source voltage of 20 V and forward voltage of 1.3 V.
Product Description
Infineon AUIRF7675M2TR is a high-performance HEXFET Type N-Channel MOSFET designed to deliver 18 A continuous drain current with a maximum drain-source voltage of 150 V. Equipped with a 7-Pin DirectFET surface mount package, this MOSFET ensures excellent thermal management allowing dual-sided cooling, ideal for demanding automotive and power applications.
This device operates in enhancement mode and supports high power dissipation up to 45 W, capable of withstanding temperatures up to 175°C, making it suitable for harsh operating environments. The package is compatible with standard PCB assembly equipment and soldering techniques including vapor phase, infrared, and convection soldering.
The Infineon M2TR model features a maximum gate-source voltage of 20 V, forward voltage of 1.3 V, and a typical gate charge of 21 nC, which contributes to efficient switching and low driving losses. Its compact size with dimensions of 6.35 mm length, 5.05 mm width, and 0.74 mm height facilitates integration in tight PCB layouts.
It complies with the automotive standard AEC-Q101, ensuring suitability for automotive Class D audio amplifier systems and other automotive power electronics. The enhanced packaging and advanced Silicon technology make this MOSFET a reliable choice for automotive and industrial applications requiring durable power switches.
Features a 7-Pin DirectFET surface mount package with dual-sided cooling capability. Supports maximum continuous drain current of 18 A and voltage rating of 150 V. High power dissipation rating of 45 W supports demanding power applications.
Operates reliably across a wide temperature range from -55°C to 175°C. Typical gate charge of 21 nC ensures efficient gate drive performance. Complies with automotive standard AEC-Q101 for enhanced reliability in automotive systems.
Compact package dimensions optimize PCB space utilization.
This MOSFET is ideal for use in industrial power management, automotive power amplifiers, and various electronic control systems. Explore the extensive range of Infineon MOSFETs and other semiconductor components at EnvMart for reliable performance tailored to your industrial and automotive design needs.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 18 A.
The maximum drain-source voltage for the AUIRF7675M2TR is 150 V.
It has a maximum power dissipation rating of 45 W, suitable for demanding applications.
The package dimensions are 6.35 mm in length, 5.05 mm in width, and 0.74 mm in height.
The typical gate charge for the AUIRF7675M2TR is 21 nC, which helps ensure efficient switching.
It operates reliably across a wide temperature range from -55°C to 175°C.
This model features a 7-Pin DirectFET surface mount package, allowing for optimal thermal management.
Yes, it complies with the automotive standard AEC-Q101, ensuring suitability for automotive applications.
The maximum gate-source voltage for the AUIRF7675M2TR is 20 V.
The forward voltage for this model is 1.3 V.
This MOSFET operates in enhancement mode as a Type N channel device.
The maximum drain-source resistance is 56 mΩ, contributing to its efficiency.
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