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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD120AN15A0 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 282mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 65W |
| Typical Gate Charge Qg @ Vgs | 11.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
onsemi FDD120AN15A0 PowerTrench N-Channel MOSFET is engineered for high-performance power switching applications. It features a maximum continuous drain current of 14 A and drain-source voltage rating of 150 V, providing robust electrical characteristics for demanding circuits.
The device is housed in a 3-Pin TO-252 surface mount package, offering efficient heat dissipation with a maximum power dissipation of 65 W, allowing stable operation in dense electronic assemblies.
With an enhancement mode N-channel design and a low maximum drain-source resistance of 282 mΩ, this MOSFET delivers high conduction efficiency and low losses. Its typical gate charge of 11.2 nC facilitates fast switching, making it suitable for power converters and motor control.
Operating temperature ranges from -55°C to 175°C ensure durability and reliability even in extreme environments. It withstands gate-source voltages from -20 V to +20 V, safeguarding device integrity during transient conditions.
Physically compact with dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height, this MOSFET integrates easily into space-constrained designs. It is ideal for industrial, automotive (non-automotive standards), and power management applications where efficient switching and thermal handling are critical.
Designed for surface mount applications for ease of PCB assembly. Enhancement mode channel ensures efficient switching performance. Maximum power dissipation capability of 65 W supports high power operations. Wide operating temperature range from -55°C to 175°C for reliability in harsh conditions.
Low maximum drain-source resistance (282 mΩ) improves conduction efficiency. Typical gate charge of 11.2 nC enables fast switching speeds. Maximum gate-source voltage tolerance up to ±20 V ensures safe operation. Compact dimensions with length 6.73 mm, width 6.22 mm, and height 2.39 mm.
Suited for industrial, power management, and electronic circuit applications. Explore more MOSFETs and related semiconductor devices at EnvMart for industrial and electronic component needs.
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