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onsemi PowerTrench N-Channel MOSFET 79 A 150 V Enhancement Surface Mount 3-Pin TO-263 FDB2532
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FDB2532 |
| Width | 11.33mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 79A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 48mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 310W |
| Typical Gate Charge Qg @ Vgs | 82nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Designed for high power dissipation up to 310 watts.
- Enhanced channel mode for efficient current control.
- Operates reliably in temperatures ranging from -55°C to 175°C.
- Typical gate charge of 82 nC for effective switching performance.
- Maximum gate-source voltage rating of -20V to +20V ensures robustness.
- Low maximum drain-source resistance of 48 milliohms for reduced losses.
- Suitable for surface mount applications requiring robust and efficient power transistors.
Product Description
onsemi FDB2532 PowerTrench N-Channel MOSFET is engineered for high current and voltage handling applications, featuring a maximum continuous drain current of 79 A and a drain-source voltage rating of 150 V. Packaged in a 3-pin TO-263 surface mount package, this device offers an excellent balance of power dissipation and size.
The enhancement mode channel provides superior control characteristics, making it suitable for a wide range of industrial, automotive, and power conversion applications. With a maximum power dissipation of 310 W, it supports demanding load conditions efficiently.
The device maintains operational integrity across a broad temperature range from -55°C to 175°C, ensuring reliability in automotive environments and harsh industrial conditions. Its low maximum drain-source resistance of 48 milliohms enhances energy efficiency by minimizing conduction losses.
Its typical gate charge of 82 nC enables fast switching, important in power switching and motor control circuits. The device’s gate-source voltage tolerance from -20 V to +20 V provides robustness against voltage spikes and ensures safe operation.
Compact dimensions (length 10.67 mm, width 11.33 mm, height 4.83 mm) facilitate high-density PCB layouts and surface mount assembly, reducing overall device footprint. The onsemi PowerTrench MOSFET delivers reliable performance for power semiconductor applications in automotive, industrial power management, and other commercial electronics sectors.
Designed for high power dissipation up to 310 watts. Enhanced channel mode for efficient current control. Compact dimensions: Length 10.67mm, Width 11.33mm, Height 4.83mm. Operates reliably in temperatures ranging from -55°C to 175°C.
Typical gate charge of 82 nC for effective switching performance. Maximum gate-source voltage rating of -20V to +20V ensures robustness. Low maximum drain-source resistance of 48 milliohms for reduced losses. Suitable for surface mount applications requiring robust and efficient power transistors.
This MOSFET is ideal for industrial automation, automotive electronics, power supplies, and motor drive circuits, ensuring efficient and reliable performance. For more solutions, explore our Semiconductor category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 79 A.
It has a maximum drain-source voltage rating of 150 V.
The dimensions of the TO-263 package are 10.67 mm in length, 11.33 mm in width, and 4.83 mm in height.
This model can dissipate a maximum power of 310 W.
The typical gate charge is 82 nC, which facilitates effective switching performance.
It operates reliably in temperatures ranging from -55°C to 175°C.
The maximum gate-source voltage rating is -20 V to +20 V.
The maximum drain-source resistance is 48 milliohms.
This model features an enhancement mode channel type.
It is designed for surface mount applications.
The country of origin for this MOSFET is India.
This MOSFET is suitable for industrial automation, automotive electronics, power supplies, and motor drive circuits.
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