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Infineon OptiMOS 3 N-Channel MOSFET 20 A 60 V Enhancement 8-Pin TSDSON BSZ067N06LS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ067N06LS3GATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 12.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 830mV |
Key Features
- Optimized for high-performance power switching applications.
- Enhancement mode operation with low on-resistance of 12.1 milliohms.
- Maximum power dissipation up to 69 W for efficient thermal management.
- Supports gate source voltage range from -20 V to +20 V for robust control.
- Compact 3.4 mm × 3.4 mm × 1.1 mm TSDSON surface mount package.
- Wide operating temperature range from -55°C to 150°C for reliability.
- Low typical gate charge of 23 nC enables fast switching performance.
- Forward voltage drop of 830 mV for reduced conduction losses.
Product Description
Infineon BSZ067N06LS3GATMA1 is a high-quality OptiMOS 3 series Power MOSFET designed to deliver efficient and reliable performance in demanding electronic applications. This N-Channel MOSFET supports a maximum continuous drain current of 20 A and a drain-source voltage rating of 60 V, making it suitable for medium power switching circuits.
The device features an 8-pin TSDSON package with compact dimensions of 3.4 mm (length) by 3.4 mm (width) and 1.1 mm height, enabling space-efficient PCB designs.
With a low on-resistance of 12.1 mΩ and a typical gate charge of 23 nC, it ensures minimal switching and conduction losses, optimizing power efficiency in SMPS and DC/DC converters.
Its wide gate source voltage tolerance (-20 V to +20 V) and broad operating temperature range (-55°C to 150°C) offer robust operational stability in industrial and automotive environments.
The maximum power dissipation rating of 69 W allows for superior thermal handling in compact form factors. Optimized technology for fast switching and enhanced energy efficiency. Surface mount device suitable for automated assembly processes.
Compliant with JEDEC qualification ensuring quality and reliability.
This MOSFET is commonly employed in industrial electronics, power management modules, automotive electronics, and commercial power supplies where performance and durability are essential.
Explore the wide range of Infineon MOSFETs at EnvMart to meet your power semiconductor needs effectively.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
This N-Channel MOSFET has a drain-source voltage rating of 60 V.
The on-resistance is 12.1 milliohms, which helps in reducing conduction losses.
The typical gate charge is 23 nC, facilitating fast switching performance.
It comes in an 8-pin TSDSON package with dimensions of 3.4 mm x 3.4 mm x 1.1 mm.
The maximum power dissipation rating is 69 W, allowing for efficient thermal management.
The operating temperature range is from -55°C to 150°C.
It supports a gate-source voltage range from -20 V to +20 V.
This model is commonly employed in industrial electronics, power management modules, and automotive electronics.
This device features an N-channel type, which is suitable for enhancement mode operation.
The forward voltage drop is 830 mV, contributing to reduced conduction losses.
The country of origin for this MOSFET is India.
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